Radio frequency power amplifier

A technology of radio frequency power and amplifier, applied in the field of radio frequency power amplifier, can solve the problems of difficulty in manufacturing radio frequency power amplifier and increase in cost of components, and achieve the effect of enhancing the robustness and improving the robustness.

Pending Publication Date: 2021-07-16
上海麓慧科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the manufacturing difficulties in the prior art to improve the tolerance of the radio frequency power amplifier by using a stronger device process, resulting in an increase in the cost of the device. RF power amplifiers that can be realized by the power amplifier manufacturing process and can effectively improve the robustness

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Examples

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Effect test

Embodiment 1

[0037] Such as figure 1 As shown, this embodiment provides a radio frequency power amplifier, including a high-frequency input terminal 1, a high-frequency output terminal 2, a device bias circuit 3, a decoupling capacitor C, a front-end matching circuit 4, an output matching circuit 5 and at least one level amplifier. Wherein, the front-end matching circuit 4 and the output matching circuit 5 are optional items, that is, they may or may not be included, and both are included in this embodiment. The signal of the RF power amplifier enters the front-end matching circuit 4 of the amplifier through the high-frequency input terminal 1, and then outputs to the high-frequency output terminal 2 through the output matching circuit 5 after being amplified by the amplifier. In this embodiment, the amplifier is implemented by a triode T. The device bias circuit 3 is used to bias the input terminal of the amplifier, that is, the base of the triode, and the decoupling capacitor C is conn...

Embodiment 2

[0042] Such as figure 2 As shown, this embodiment is a further improvement on the basis of Embodiment 1. Wherein, the tolerance circuit 6 includes a clamping circuit 601, a first inductive device Lt and a second inductive device Lb; the first inductive device Lt and the second inductive device Lb are connected in series between the output terminal Vo of the amplifier and the working power supply VCC; An inductive device Lt is connected in parallel with the clamping circuit 601 . One end of the first inductive device Lt is electrically connected to the second inductive device Lb. The other end of the first inductive device Lt is electrically connected to the working power supply VCC.

[0043] In this embodiment, both the first inductive device Lt and the second inductive device Lb can be inductance or a part of the inductance on the chip or chip inductors or chip leads, etc., as long as they are devices with inductance, the present invention is not limited to this .

[004...

Embodiment 3

[0046] Such as image 3 As shown, this embodiment is a further improvement on the basis of Embodiment 2. Wherein, the clamping circuit is implemented by a diode D, the anode of the diode D is connected to the working power supply VCC, and the cathode of the diode D is connected to the point N with the second inductive device Lb.

[0047] In this embodiment, in order to reduce the area and cost, an optimal implementation method is adopted, that is, the clamping circuit is implemented with only one diode D. The diode D can also be realized by a triode circuit, specifically, the base and the collector of the triode are short-circuited and used as a diode. Which device to choose to implement the clamping circuit depends on the specific manufacturing process and application requirements, which is not limited in the present invention.

[0048] In this embodiment, no matter how high the voltage or current applied to the radio frequency power amplifier is, limited by the clamping fu...

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Abstract

The invention discloses a radio frequency power amplifier, and the power amplifier comprises at least one stage of amplifier, the radio frequency power amplifier further comprises at least one tolerance circuit, and each tolerance circuit is connected in series between the output end of one amplifier and a working power supply; and the tolerance circuit is used for clamping the saturation output voltage and current of the corresponding amplifier. According to the radio frequency power amplifier, the existing radio frequency power amplifier manufacturing process is utilized, the tolerance circuit is additionally arranged between the output end of the amplifier and the working power supply to clamp the saturation output voltage and current of the corresponding amplifier, and the firmness of the radio frequency power amplifier can be effectively improved on the premise that the process cost of a device is not increased.

Description

technical field [0001] The invention relates to the field of power amplifiers, in particular to a radio frequency power amplifier. Background technique [0002] The ruggedness of a radio frequency power amplifier is also called robustness, which refers to its ability to withstand high voltage or high current without being permanently damaged in the state of high power output (or input). RF power amplifiers may be driven to a high power state under various intentional or unintentional conditions, and its tolerance is an important indicator to measure the reliability and safety of RF power amplifiers. [0003] With the development of the communication industry, the integration of RF power amplifiers is getting higher and higher, and its operating frequency is also getting higher and higher. Therefore, the ability of RF power amplifiers, especially devices and processes used in RF power amplifier integrated circuits, to resist high voltage and high current tends to decrease. ...

Claims

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Application Information

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IPC IPC(8): H03F3/189
CPCH03F3/189
Inventor 丁苗富
Owner 上海麓慧科技有限公司
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