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Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode and preparation method thereof

A plasma and diode technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems affecting the integration performance and stealth performance of antenna systems, the carrier injection ratio of the device is not high, and PiN diode application limitations and other issues to achieve the effect of improving integration and stealth performance, improving antenna performance, and improving performance

Pending Publication Date: 2021-06-18
ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the semiconductor materials used in the intrinsic region of traditional solid-state plasma PiN diodes are all silicon or germanium. The forbidden band width of silicon or germanium materials is very large, and the difference in the formed band gap is not large, which makes the carrier injection ratio of the device not tall
In addition, the PiN diodes currently studied all use metal as the contact electrode. The existence of metal electrodes greatly affects the integration performance and stealth performance of the antenna system, making the application of silicon-based solid-state plasma PiN diodes in future communication systems restricted

Method used

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  • Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode and preparation method thereof
  • Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode and preparation method thereof
  • Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode and preparation method thereof

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Embodiment 1

[0060] See figure 1 , figure 1 It is a flow chart of a method for manufacturing a Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode according to an embodiment of the present invention, the method is suitable for preparing a lateral solid-state plasma PiN diode based on a GeOI substrate, and the Si-GeSn -Si heterogeneous GeSn-based solid-state plasmonic PiN diodes are mainly used to make silicon-based highly integrated antennas. The method comprises the steps of:

[0061] (a) select a GeOI substrate, and dope in the GeOI substrate to form a top GeSn region;

[0062] (b) setting a deep trench isolation region in the GeSn region on the top layer of the substrate;

[0063] (c) etching the GeSn region to form a P-type trench and an N-type trench, and the depth of the P-type trench and the N-type trench is less than the thickness of the top-layer GeSn region;

[0064] (d) forming a P-type active region and an N-type active region by ion implantation in the P-type ...

Embodiment 2

[0104] See Figure 2a-Figure 2t , Figure 2a-Figure 2t It is a schematic diagram of a preparation method of a Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode according to an embodiment of the present invention. A Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode between 50 microns and 150 microns) can be used as an example to describe in detail, and the specific steps are as follows:

[0105] S10, selecting a GeOI substrate.

[0106] See Figure 2a , the crystal orientation of the GeOI substrate 101 may be (100) or (110) or (111), without any limitation here. In addition, the doping type of the GeOI substrate 101 can be n-type or p-type, and the doping concentration is, for example, 0.5×10 14 ~1×10 15 cm -3 , the thickness of the top layer Ge is, for example, 30-120 μm.

[0107] S20, doping in the GeOI substrate to form a top-layer GeSn region.

[0108] See Figure 2b The specific method may be: photoetching the GeOI substrate, doping t...

Embodiment 3

[0148] Please refer to image 3 , image 3 It is a schematic diagram of the device structure of the Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode according to the embodiment of the present invention. The Si-GeSn-Si heterogeneous GeSn-based PiN diode adopts the above-mentioned figure 1 The preparation method shown is made, specifically, the Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode is prepared and formed on the GeOI substrate 301, and the P region 303, the N region 304 of the diode and the lateral position of the P The intrinsic region between region 303 and the N region 304 is located in the top GeSn layer 302 of the substrate. Wherein, the PiN diode adopts deep trench isolation technology, that is, a deep trench isolation region 307 is provided outside the P region 303 and the N region 304, and the depth of the isolation trench 307 is greater than or equal to the thickness of the top GeSn layer 302. In addition, the P region 303 an...

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Abstract

The invention discloses a Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode and a preparation method thereof, and the preparation method comprises the steps: selecting a GeOI substrate, and carrying out the doping in the GeOI substrate, so as to form a top layer GeSn region; arranging a deep groove isolating region in the GeSn region on the top layer of the substrate; etching the GeSn region to form a P-type groove and an N-type groove, wherein the depths of the P-type groove and the N-type groove are smaller than the thickness of the top-layer GeSn region; forming a P-type active region and an N-type active region in the P-type groove and the N-type groove by adopting ion implantation; and forming a GeSn alloy lead on the substrate. According to the invention, the top GeSn region is introduced to dynamically control the content of the Sn component in the top Ge, so that the forbidden band width of the intrinsic region is reduced. Due to the existence of the Si-GeSn-Si heterostructure, the forbidden band width difference can reach 0.7 eV, the carrier injection ratio is improved, and the solid-state plasma concentration and distribution uniformity are improved. The GeSn alloy lead is formed by adopting the RPCVD technology, a metal electrode in a traditional diode is replaced, and the integration level and the stealth performance of an antenna system are greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and device manufacturing, in particular to a Si-GeSn-Si heterogeneous GeSn-based solid-state plasma PiN diode and a preparation method. Background technique [0002] The solid-state plasma antenna is composed of a series of SPiN (surface PiN) diode array units. The diode is used as the basic radiation unit of the antenna. By applying a suitable forward voltage to control the formation and disappearance of the solid-state plasma region in the intrinsic region of the diode, the radiation of the antenna The area changes dynamically to achieve reconfigurable antenna performance. However, the semiconductor materials used in the intrinsic region of traditional solid-state plasma PiN diodes are all silicon or germanium. The forbidden band width of silicon or germanium materials is very large, and the difference in the formed band gap is not large, which makes the carrier injection ratio o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/868H01L29/06H01L21/329
CPCH01L29/868H01L29/0603H01L29/0684H01L29/6609
Inventor 苏汉罗卫兵
Owner ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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