Etching method of silicon carbide wafer

Abstract

The invention discloses an etching method of a silicon carbide wafer. The method comprises the following steps of: a transfer step: transferring the silicon carbide wafer with a patterned mask on the surface into a process chamber; and an etching step: introducing process gas into the process chamber, exciting the process gas into plasma, etching the silicon carbide wafer, wherein the process gas includes an etching gas and a diluent gas, the etching gas is used for etching the silicon carbide wafer, and the dilution gas is used for diluting the concentration of the plasma obtained by exciting the process gas. By adopting the etching method disclosed by the technical scheme to etch the silicon carbide wafer, the problem that a device is easy to damage due to a point discharge phenomenon caused by the fact that the side wall and the bottom surface of the formed etching structure are almost vertical can be prevented.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to an etching method for a silicon carbide wafer. Background technique [0002] As the third-generation wide-bandgap semiconductor material, silicon carbide (SiC) material has a series of advantages such as large bandgap width, high thermal conductivity, high breakdown electric field strength, high saturated electron drift speed and ability to withstand extreme environmental changes, making SiC Materials have great application potential in high temperature, high frequency, high power, optoelectronics and radiation resistance. At present, silicon carbide materials are mainly used in the preparation of electronic devices. [0003] Silicon carbide material has high hardness and very stable chemical properties. Generally speaking, dry etching is used to etch silicon carbide wafers. Generally speaking, in the process of etching silicon carbide wafers, the bottom wall of...

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Problems solved by technology

[0004] The invention discloses an etching method of a silicon carbide wafer to solve the problem that when etching a silicon carbide wafer currently, the side wall and the bottom surface of the etched structure formed are nearly vertical, which will cause a tip discharge phenomenon, thereby easily damaging the device.

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