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Ultraviolet band ultra-low absorption double-sided antireflection film and preparation method thereof

A technology of ultraviolet band and anti-reflection coating, which is applied in the direction of optical components, optics, instruments, etc., can solve the problems that the service life and use effect of the lens cannot meet the customer's requirements, and the film layer has large absorption.

Active Publication Date: 2021-06-04
NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing anti-reflection coating in the ultraviolet band has always had the problem of large film absorption, which makes the service life and use effect of the lens fail to meet the customer's requirements

Method used

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  • Ultraviolet band ultra-low absorption double-sided antireflection film and preparation method thereof
  • Ultraviolet band ultra-low absorption double-sided antireflection film and preparation method thereof
  • Ultraviolet band ultra-low absorption double-sided antireflection film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as figure 1 As shown, a double-sided anti-reflection coating with ultra-low absorption in the ultraviolet band has a structure of Air / LHLHLHLH / Sub / HLHLHLHL / Air, where H represents SiO 2 Film layer, the thickness is 63mm, L stands for MgF 2 The film layer has a thickness of 60mm, Sub represents the substrate, the thickness of the substrate is 5mm, and the material is fused silica.

[0041] The preparation method of above-mentioned antireflection film, comprises the steps:

[0042] (1) Substrate heating: Wipe the substrate with a degreasing gauze dipped in a 3:1 mixture of absolute ethanol and ether, then use ultrasonic cleaning to clean the substrate, and then bake and heat the substrate in a vacuum state to increase the temperature of the substrate. Wherein, the baking temperature is 160°C-170°C, and the baking time is 1.5 hours;

[0043] (2) Ion beam cleaning: perform ion beam cleaning on the substrate, the ion cleaning time is 2min, the ion beam voltage is 100...

Embodiment 2

[0053] Such as figure 2 As shown, a double-sided anti-reflection film with ultra-low absorption in the ultraviolet band has a structure of: Air / 1.06L0.63H1.27L0.66H / Sub / 0.66H1.27L0.63H1.06L / Air, and the theoretical thickness of each layer is 36.84 / 81.84 / 35.17 / 68.3 / Sub / / 68.3 / 35.17 / 81.84 / 36.84nm, where H stands for LaF 3 film layer, L stands for AlF 3 For the film layer, Sub represents the substrate, the thickness of the substrate is 5mm, and the material is sapphire.

[0054] The preparation method of above-mentioned antireflection film, comprises the steps:

[0055] (1) Substrate heating: Wipe the substrate with a degreasing gauze dipped in a 3:1 mixture of absolute ethanol and ether, then use ultrasonic cleaning to clean the substrate, and then bake and heat the substrate in a vacuum state to increase the substrate temperature. Wherein, the baking temperature is 160°C-170°C, and the baking time is 1.5 hours;

[0056] (2) Ion beam cleaning: perform ion beam cleaning on t...

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Abstract

The invention discloses an ultraviolet band ultra-low absorption double-sided antireflection film and a preparation method thereof, and the structure of the ultraviolet band ultra-low absorption double-sided antireflection film is Air / (biLaiH) m / Sub / (aiHbiL) m / Air, wherein Sub represents a substrate; m is the number of cycles, and m is an integer from 2 to 6; H represents a high-refractive-index film layer, and the refractive index of the high-refractive-index film layer is 1.5-3; L represents a low-refractive-index film layer, and the refractive index of the low-refractive-index film layer is 1-1.5; ai and bi respectively represent the optical thickness coefficient of each film layer, the numerical values are related to the reference wavelength lambda, (ai lambda) is more than or equal to 0 and less than or equal to 200, and (bi lambda) is more than or equal to 0 and less than or equal to 200. According to the ultraviolet band ultra-low absorption double-sided antireflection film, the film system design and the process are improved, 355nm ultraviolet antireflection is realized by plating the film systems on the surfaces of the two sides of the ultraviolet window glass substrate with the thickness of 5mm, the absorption is reduced, the transmittance is improved, the average transmittance is greater than 99.5%, and the single-sided reflection is less than 0.15%.

Description

technical field [0001] The invention relates to an ultra-low absorption double-sided anti-reflection film in the ultraviolet band and a preparation method thereof, belonging to the field of anti-reflection films. Background technique [0002] In optical components, the light energy is lost due to the reflection on the surface of the component. In order to reduce the reflection loss on the surface of the component, a transparent dielectric film is often coated on the surface of the optical component. This film is called an anti-reflection coating. [0003] The existing anti-reflection coating in the ultraviolet band has always had the problem of large film absorption, which makes the service life and use effect of the lens fail to meet the customer's requirements. Contents of the invention [0004] The invention provides an ultra-low absorption double-sided anti-reflection film in the ultraviolet band and a preparation method thereof. Through the film system design and proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/115
CPCG02B1/115
Inventor 陈莉李全民吴玉堂王国力
Owner NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD
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