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Single-molecule field effect transistor based on supramolecules and preparation method thereof

A field-effect transistor and single-molecule technology, which is applied in the field of supramolecular-based single-molecule field-effect transistors, can solve the problem of low switching ratio of small molecules

Active Publication Date: 2021-06-04
NANKAI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005]The ratio of small molecule switches reported so far is not high, and there is still a long way to go before the real integrated application

Method used

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  • Single-molecule field effect transistor based on supramolecules and preparation method thereof
  • Single-molecule field effect transistor based on supramolecules and preparation method thereof
  • Single-molecule field effect transistor based on supramolecules and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058]

[0059] In the formula B, x 1 is 2;

[0060] R 1 for - when

[0061] Self-assembly process of single-molecule heterojunction:

[0062] First, the host molecule cucurbituril [8] and the guest molecule formula B described in Example 1 (the molar ratio is 1:2, and the host concentration is about 2×10 -4 M) Mix in DMSO solution and pre-assemble at room temperature for 4 hours.

[0063] Dissolve 1-(3-dimethylaminopropyl)-3-2 ethylcarbodiimide hydrochloride in 10 ml of anhydrous pyridine;

[0064] Add graphene nano-gap point electrode device (containing platinum gate electrode, 300 nanometers of silicon dioxide / silicon as substrate) to above-mentioned solution;

[0065] Under dark conditions, react under argon atmosphere for 48 hours;

[0066] After the reaction is over, the device is taken out from the solution, washed three times with acetone and ultrapure water, and dried to obtain the device;

[0067] Liquid ion DEME-TFSI is added dropwise to cover the graph...

Embodiment 2

[0070]

[0071] In the formula A, x 1 is 2, x 2 is 2;

[0072] R 1 for - when

[0073] Self-assembly process of single-molecule heterojunction:

[0074] First, the host molecule cucurbituril [7] and the guest molecule formula A described in Example 2 (the molar ratio is 1:1, and the host concentration is about 2×10 -4 M) Mix in DMSO solution and pre-assemble at room temperature for 4 hours.

[0075] Dissolve 1-(3-dimethylaminopropyl)-3-2 ethylcarbodiimide hydrochloride in 10 ml of anhydrous pyridine;

[0076] Add graphene nano-gap point electrode device (containing platinum gate electrode, 300 nanometers of silicon dioxide / silicon as substrate) to above-mentioned solution;

[0077] Under dark conditions, react under argon atmosphere for 48 hours;

[0078] After the reaction is over, the device is taken out from the solution, washed three times with acetone and ultrapure water, and dried to obtain the device;

[0079] Liquid ion DEME-TFSI is added dropwise to cove...

Embodiment 3

[0082]

[0083] In the formula A, x 1 for 3, x 2 is 3;

[0084] R 1 for hour,

[0085] Self-assembly process of single-molecule heterojunction:

[0086] First, the host molecule cucurbituril [7] and the guest molecule formula A described in Example 3 (the molar ratio is 1:1, and the host concentration is about 2×10 -4 M) Mix in DMSO solution and pre-assemble at room temperature for 4 hours.

[0087] Dissolve 1-(3-dimethylaminopropyl)-3-2 ethylcarbodiimide hydrochloride in 10 ml of anhydrous pyridine;

[0088] Add graphene nano-gap point electrode device (containing platinum gate electrode, 300 nanometers of silicon dioxide / silicon as substrate) to above-mentioned solution;

[0089] Under dark conditions, react in an argon atmosphere for 48 hours;

[0090] After the reaction is over, the device is taken out from the solution, washed three times with acetone and ultrapure water, and dried to obtain the device;

[0091] Liquid ion DEME-TFSI is added dropwise to co...

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Abstract

The invention discloses a single-molecule field effect transistor based on supramolecules and a preparation method thereof, and belongs to the field of field effect transistors. The device is composed of a graphene array point electrode, platinum grid electrodes, a supramolecular heterojunction and ionic liquid, wherein the platinum grid electrodes are positioned on two sides of the graphene array point electrode and are in non-conductive contact with the graphene array point electrode; and the molecular heterojunction is connected with the graphene array point electrode through an amido bond. Cucurbituril is selected as a host molecule, amethyst molecules, styrene derivatives, anthracene derivatives and the like are selected as guest molecules, and research shows that the supramolecular system can be obtained by assembling through interaction of the host and the guest. The technical effect of the invention is that the graphene nanoelectrode and the functional material molecules are directly bonded together through the amide covalent bond, a single-molecule field effect transistor can be constructed, and the switching function can be realized.

Description

technical field [0001] The invention belongs to the field of field effect transistors, in particular to a supramolecular-based unimolecular field effect transistor. Background technique [0002] In the current semiconductor industry, transistors form the core components of electronic circuits and are the cornerstone of the contemporary digital revolution. Since the first model of transistors was proposed in 1947, researchers have developed various forms of transistors. As the basic unit device for building electronic circuits, the field effect transistor is a relatively new type of semiconductor material. Its main principle is to use the third terminal electrode (gate) to realize the regulation of the current between the source and drain electrodes. On the one hand, the transistor can realize the logic function of the switch, and on the other hand, it can also realize the function of the amplifier. [0003] In the field of single-molecule electronics, single-molecule field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G83/00H01L51/05H01L51/30
CPCC08G83/008H10K85/00H10K10/46
Inventor 祝欣郭雪峰贾传成李佩慧
Owner NANKAI UNIV
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