Electrostatic protection structure

A static protection and protection ring technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve problems such as static electricity cannot be eliminated, and achieve the effects of ensuring stability and safety, avoiding a large amount of accumulation, and eliminating static electricity

Pending Publication Date: 2021-06-01
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to various limitations of the actual process, the smooth conductive lines that make up the protective ring cannot eliminate static electricity well by grounding.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic protection structure
  • Electrostatic protection structure
  • Electrostatic protection structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0026] See figure 1 and figure 2 , the embodiment of the present invention provides an electrostatic protection structure, the electrostatic protection structure includes a conductive body 100 and at least one conductive bump 200, the conductive body 100 surrounds the chip to be pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an electrostatic protection structure. The electrostatic protection structure comprises a conductive body and a conductive protrusion, the conductive body surrounds a chip needing to be protected and is grounded, and the conductive protrusion is arranged on the conductive body. According to the electrostatic protection structure, the conductive protrusion is arranged on the conductive body, static electricity can be effectively eliminated in a point discharge mode, a large amount of charges are prevented from being accumulated in the electrostatic protection structure, and therefore the stability and safety of the chip are ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an electrostatic protection structure. Background technique [0002] The chip can also be called an integrated circuit. With the continuous development of the integrated circuit manufacturing process, the chip packaging density and integration are getting higher and higher, the chip size is getting smaller and smaller, and the interference between circuit modules is becoming more and more obvious. Electrostatic protection appear more important. [0003] The excess charge brought by the ESD (ElectroStatic discharge) phenomenon will be transmitted to the specific circuit through the input and output pins of the specific circuit in a very short period of time, thereby destroying the specific circuit of the chip. [0004] In the current chip packaging layout, a seal ring structure is generally provided around the chip. There is a certain distance between the seal ring ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/60
CPCH01L23/60
Inventor 张志伟
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products