Ion implantation device and ion implantation method

Abstract

The application discloses an ion implantation device and an ion implantation method. The ion implantation device includes: a reaction chamber; a gas supply source, connected to the reaction chamber, and injecting gas to be ionized into the reaction chamber; a carrying platform, located at the bottom of the reaction chamber, for carrying a wafer; The first electrode is located on the carrying platform, connected to the first power supply, and the wafer is located on the first electrode; the second electrode is located above the wafer, connected to the second power supply, and between the first electrode Generating an ion beam; a magnetic field generator, located on the first electrode or the carrying platform, for generating a magnetic field around the wafer, and changing the ion beam irradiation by adjusting the magnitude of the magnetic field generated by the magnetic field generator angle on the wafer. Therefore, when performing ion implantation on a wafer with a channel hole, the ion beam can be directly implanted into the bottom along an oblique angle without damaging the side wall.

Description

technical field [0001] The present invention relates to memory technology, and more specifically, to an ion implantation device and an ion implantation method. Background technique [0002] As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. At present, a storage device with a three-dimensional structure, that is, a 3D storage device, has been developed, which includes a plurality of storage units stacked in a vertical direction, and the integration level can be doubled on a wafer per unit area. Existing 3D memory devices, such as NAND memory devices, have fast writing speed and simple erasing operation, therefore, 3D memory devices adopting NAND structure have been widely used. Correspondingly, the manufacturing process of the NAND 3D storage device is constantly expanding, and commonly used processes include, for example, an etching process, a deposition process, an...

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Problems solved by technology

However, in the current ion implantation system, the ion beam is irradiated to the surface of the semiconductor wafer in a single direction under the action of an electric field. It is difficult to accurately reach the bottom of the channel hole, especially for the etching of the channel hole due to the large number of stacked structure layers. For irregular semiconductor wafers, a single ion beam implantation direction cannot perform ion implantation well in the specified area, thus causing damage to the structure of the semiconductor wafer, resulting in reduced device performance and lower yield

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