On-chip transformer capable of isolating voltage multiplication

Abstract

The invention discloses an on-chip transformer capable of isolating voltage multiplication. A single-channel and double-channel high-side channel transformer architecture comprises a charge pump module, a bootstrap module and an N-stage transformer module, a single channel comprises N+1 tube cores, a first-stage transformer module signal modulation unit is arranged in the first tube core, a power supply voltage is a low-voltage power supply, and reference ground is a ground voltage; an ith-stage transformer module signal modulation unit and an (i-1)th-stage transformer module signal demodulation unit are arranged in the ith tube core, the reference ground is an ith power supply, and the power supply voltage is a signal generated after the ith power supply is lifted by a low-voltage power supply by the charge pump module; an Nth-stage transformer module signal demodulation unit is arranged in the (N+1)th tube core, the reference ground is floating ground, and the power supply voltage is a signal generated after the bootstrap module lifts the floating ground by one low-voltage power supply; and the double-channel low-side channel transformer architecture comprises N stages of transformer modules which are distributed in the N+1 tube cores, the tube core power supply voltage of the low-side channel is a low-voltage power supply, and the reference ground is the ground voltage.

Description

technical field [0001] The invention belongs to the technical field of digital isolation transformers, and relates to an on-chip coreless transformer capable of effectively improving isolation voltage, including a single-channel on-chip transformer architecture and a dual-channel on-chip transformer architecture. Background technique [0002] The traditional gate drive circuit uses a level shift circuit, and uses the inherent junction of LDMOS and VDMOS for isolation. As a power tube that needs to be driven, the IGBT cannot be integrated on the chip. Although the withstand voltage of the IGBT can reach more than 5kV, the isolation voltage of the existing level shift architecture is far from enough to achieve the withstand voltage of the IGBT (the isolation voltage of the LDMOS commonly used at home and abroad The voltage is mostly 600V-1200V). [0003] like figure 1 The schematic diagram of the structure of a traditional on-chip magnetic isolation transformer is shown. The...

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Problems solved by technology

[0004] Based on the above analysis, it is urgent to propose a voltage isolation architecture with high isolation voltage capability; on the other hand, due to the large parasitic capacitance of the high-voltage tube, the level shift circuit has a limited signal speed and cannot achieve high-speed conversion. Therefore, it is also necessary to propose a Voltage-isolated architecture capable of high-speed conversion

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