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In-situ growth method of refractory super-strong metal single crystal nanowire

An in-situ growth, single crystal nanotechnology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc.

Active Publication Date: 2021-05-28
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method overcomes the limitations of existing methods, and obtains tungsten single crystal nanowires with high strength, large elastic strain, uniform size, no surface pollution and few defects at room temperature

Method used

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  • In-situ growth method of refractory super-strong metal single crystal nanowire
  • In-situ growth method of refractory super-strong metal single crystal nanowire
  • In-situ growth method of refractory super-strong metal single crystal nanowire

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Embodiment

[0025] Concrete steps of the present invention are:

[0026] (1) Install the fracture surface of tungsten metal wire (0.25mm, purity 99.9wt.%) and electrochemically etched tungsten tip respectively on both ends of the in-situ electrical sample rod (Nanofactory STM-TEM holder) and put them into the electron microscope ( Titan 80-300), the radius of curvature of the needle tip is 3×10 -7 m, the radius of curvature of the protruding surface of the sample end is 8×10 -7 m, through the piezoelectric controller (Mains220V), the tip of the needle tip is in contact with the protruding surface of the sample end, and a constant voltage (8V) is applied to generate a current for Joule heating;

[0027] (2) By moving the tungsten tip to reduce the contact area of ​​the two tips, as the contact area decreases, the current density of the contact point increases to melt and disconnect; the electric field enhanced by the curvature of the molten metal between the two disconnected tungsten tips ...

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Abstract

The invention discloses an in-situ growth method of a super-strong metal tungsten single crystal nanowire with a large length-diameter ratio and low defect concentration. The method comprises the following specific steps: applying voltage to two tungsten tips which are in contact with each other based on an in-situ transmission electron microscopy technology to generate a current, and locally melting and breaking metal through Joule heating; and allowing the molten metal to be rapidly solidified in a strong electric field between two disconnected tips and to grown into the metal tungsten single crystal nanowire with the large length-diameter ratio and the extremely low defect density under the action of the electric field. According to the invention, the one-step growth of the single tungsten single crystal nanowire is realized, steps are simple, and efficiency is high (wherein the growth time of the single nanowire is far less than 1s); and the prepared nanowire has the characteristics of uniform size, few defects, high crystallinity, no surface pollution, large elastic strain, high strength and the like.

Description

technical field [0001] The invention discloses an in-situ growth method of low-defect, high-length-to-diameter ratio, and ultra-strong metal tungsten single crystal nanowires. The method has the advantages of simple process, convenient operation, low cost and high efficiency; the grown tungsten single crystal nanowires have the characteristics of uniform size, high crystallinity, no surface pollution, few defects, large elastic strain, and high strength (close to the theoretical limit strength), etc. . The invention overcomes the technical bottleneck of growing refractory metal nanowires by traditional preparation methods, is especially suitable for the preparation of refractory high-strength metal single crystal nanowires, and the related technology belongs to the field of micro-nano processing and manufacturing. Background technique [0002] With the development of device miniaturization, micro-nanoscale materials have received extensive attention in the past decade. Met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/02C30B29/62C30B29/02B22F9/08B22F1/00B82Y30/00B82Y40/00
CPCC30B11/02C30B11/003C30B11/005C30B29/02C30B29/62B22F9/08B82Y30/00B82Y40/00B22F1/0547B22F1/07
Inventor 钟立李海
Owner SOUTHEAST UNIV
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