Trace element measuring device and trace element measuring method

Abstract

The invention provides a trace element measuring device and a trace element measuring method. The trace element measuring device comprises: an analysis instrument; a switching module which is used for enabling the port of the first multi-way valve to be selectively communicated with a to-be-detected solution, a standard solution and a cleaning solution, wherein the two ends of the first liquid storage component communicate with a port of the first multi-way valve, the two ends of the second liquid storage part are communicated with a port of the second multi-way valve, the two ends of the third liquid storage component communicate with a port of the third multi-way valve, and through the switching of the second multi-way valve, the second pump is communicated with the analytical instrument through and not through the third liquid storage component; and pumps, wherein the first pump is communicated with a port of the first multi-way valve, the second pump is communicated with a port of the third multi-way valve, the third pump is communicated with the second multi-way valve, and the fourth pump and the fifth pump are used for providing liquid and are communicated with the port of the second multi-way valve. The device has the advantages of accurate detection and the like.

Description

technical field [0001] The invention relates to element detection, in particular to a measuring device and method for trace elements. Background technique [0002] The manufacture of semiconductor devices requires strict control of pollution sources, and industry insiders estimate that pollution has caused about 50% of the output loss. Alkali metals and alkaline earth metals (Li, Na, K, Ca, Mg, Ba, etc.) pollution can cause component leakage, resulting in low breakdown; transition metals and heavy metals (Fe, Cr, Ni, Cu, Au, Mn, Pb, etc. ) pollution can shorten the life of the components or increase the dark current when the components are working; the pollution of infiltrating elements (S, P, Si, As, Sb, B, Al, etc.) has a diffusion effect and affects the number of electrons and holes. There are many kinds of chemicals in the manufacturing process. The inorganic ones include strong acids such as hydrochloric acid, hydrogen peroxide, sulfuric acid, and hydrofluoric acid, an...

AI Technical Summary

Problems solved by technology

The matrix of each chemical is inconsistent, and the required detection element concentration is at the ng / L level. Although the current detection method is the precision instrument Inductively Coupled Plasma Mass Spectrometer (ICP-MS), the pre-treatment such as sample dilution and standard solution preparation process are likely to introduce pollution

[0003] The current practice is to use the external standard method. The external standard method is to add a certain amount of standard substance in a gradient to make a standard sample in a blank solvent, and perform sample processing and detection in parallel with the unknown sample. This method is suitable for standard samples and samples. The matrix is ​​basically the same, but it is difficult to obtain accurate results when the matrix is ​​complex;

[0004] In the process of testing a large number of samples, it is difficult to test the fatigue of the peristaltic pump tube of the detection equipment ICP-MS under the same conditions. To deal with samples of different matrices, the traditional external standard method is difficult to meet the requirements

[0005] To deal with complex matrices, laboratory analysts can also use the manual standard addition method to measure, manually divide the sample to be tested into several parts, and manually add standard solutions of different concentrations; to achieve simultaneous detection of standard solutions and unknown samples; however, in the semiconductor industry The manual standard addition method is very easy to pollute the sample in operation for the sample with ng / L level content, and has great difficulty in environmental requirements and operation

Images