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Quasi-vertical Schottky diode with air bridge interconnected with strip-shaped anode

A Schottky diode and air bridge technology, applied in electrical components, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as reducing the power load capacity of Schottky diodes

Active Publication Date: 2021-05-14
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the smaller and smaller devices will make the current more concentrated on the small-sized anode, so that the heat generation will be more concentrated, thereby reducing the power load capacity of the Schottky diode

Method used

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  • Quasi-vertical Schottky diode with air bridge interconnected with strip-shaped anode
  • Quasi-vertical Schottky diode with air bridge interconnected with strip-shaped anode
  • Quasi-vertical Schottky diode with air bridge interconnected with strip-shaped anode

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Embodiment Construction

[0018] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0019] (1) Structural composition

[0020] Such as figure 1 Shown is the Schottky diode of the air bridge interconnected strip-shaped anode of the present invention, including a semi-insulating substrate 1, a highly doped epitaxial layer 2, a low-doped epitaxial layer 3, a cathode metal 4, a strip-shaped anode metal 5, Protective medium 6, anode powered metal plate 7 and metal air bridge 8; highly doped epitaxial layer 2 is formed on semi-insulating substrate 1, low doped epitaxial layer 3 is formed on the surface of highly doped epitaxial layer 2, strip anode The metal 5 is formed on the surface of the low-doped epitaxial layer 3 , the protective medium 6 is formed on the surface of the cathode metal 4 and the low-doped epitaxial layer 3 , and the anode-powered metal plate 7 is formed on the surface of the semi-insulating substrate ...

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Abstract

The invention discloses a quasi-vertical Schottky diode with an air bridge interconnected with a strip-shaped anode. The quasi-vertical Schottky diode comprises a semi-insulating substrate, a highly-doped epitaxial layer, a lowly-doped epitaxial layer table top, cathode metal, strip-shaped anode metal, a protective medium, an anode power-up metal flat plate and a metal air bridge; the highly-doped epitaxial layer and the anode power-up metal flat plate are arranged at an interval and are both arranged on the semi-insulating substrate; the lightly-doped epitaxial layer table board and the cathode metal are spaced by a certain distance or are in contact with each other, and are both arranged on the highly-doped epitaxial layer; the strip-shaped anode metal is arranged on the lightly-doped epitaxial layer table surface, and a certain distance is kept between the strip-shaped anode metal and the cathode metal; and the metal air bridge is positioned on the anode metal and the anode power-up metal flat plate and connects the strip-shaped anode metal and the anode power-up metal flat plate. By adopting the strip-shaped anode structure, the series resistance of the Schottky diode is reduced, and the cutoff frequency and the heat dissipation capability are improved.

Description

technical field [0001] The invention relates to a quasi-vertical Schottky diode, in particular to a quasi-vertical Schottky diode with strip-shaped anodes interconnected by an air bridge. Background technique [0002] Since the Schottky diode is a multi-sub device, it has a higher frequency response characteristic than a PN junction, and also has a lower turn-on voltage. Therefore, Schottky diodes are very suitable for high-frequency use, and play an important role in use scenarios such as mixing, switching, frequency multiplication, and detection in the millimeter-wave submillimeter-wave and terahertz frequency bands. In the case of a certain junction capacitance, the on-resistance (also called series resistance) of the Schottky diode is a key parameter affecting the performance of the Schottky diode. As the frequency of electromagnetic waves in Schottky diode usage scenarios is getting higher and higher, limited by the insufficient output of current high-frequency power s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/417H01L23/367H01L29/872
CPCH01L29/872H01L29/417H01L23/3677
Inventor 代鲲鹏张凯范道雨吴少兵陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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