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Preparation device and preparation process of electronic film material

An electronic thin film and preparation device technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of difficult realization of thin film, high energy consumption of thin film, low film forming efficiency, etc. The effect of uniformity, high growth rate and good adsorption effect

Active Publication Date: 2021-05-14
ZHAOQING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing Ga 2 o 3 The thin film preparation method has the problems of high energy consumption, low film formation efficiency and uneven film formation. At the same time, the existing Ga 2 o 3 The thin film preparation method is not easy to achieve in the preparation of doped thin films

Method used

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  • Preparation device and preparation process of electronic film material
  • Preparation device and preparation process of electronic film material
  • Preparation device and preparation process of electronic film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A preparation process for an electronic thin film material, specifically comprising the following steps:

[0049] S1. Immerse the silicon wafer substrate in acetone, absolute ethanol, and deionized water for 8 minutes for ultrasonic cleaning, then rinse with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0050] S2. Fix the silicon wafer substrate on the sample holder, then close the cover plate of the deposition chamber, evacuate the deposition chamber to a vacuum degree of 5Pa by an air pump, and then fill the deposition chamber with N 2 To standard atmospheric pressure, turn on the substrate heating device to heat the substrate to 85°C;

[0051] S3. Control the distance between the electrode plates to 7mm, turn on the RF power supply, the RF frequency is 450KHz, and the RF power is 100W. 2 The organic gallium precursor Ga(CH 3 ) 3 brought into the deposition chamber, the organic gallium precursor Ga(CH 3 ) 3 The a...

Embodiment 2

[0057] A preparation process for an electronic thin film material, specifically comprising the following steps:

[0058] S1. Immerse the PET film substrate in acetone, absolute ethanol, and deionized water for 5 minutes for ultrasonic cleaning, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0059] S2. Fix the PET film substrate on the sample holder, then close the cover plate of the deposition chamber, evacuate the deposition chamber to a vacuum degree of 8Pa by an air pump, and then fill the deposition chamber with N 2 To standard atmospheric pressure, turn on the substrate heating device to heat the substrate to 80°C;

[0060] S3. Control the distance between the electrode plates to 6mm, turn on the RF power supply, the RF frequency is 800KHz, and the RF power is 150W. 2 The organic gallium precursor Ga(C 2 h 5 ) 3 brought into the deposition chamber, the organic gallium precursor Ga(C 2 h 5 ) 3 The ...

Embodiment 3

[0065] A preparation process for an electronic thin film material, specifically comprising the following steps:

[0066] S1. Submerge the potassium bromide tablet substrate into acetone, absolute ethanol, and deionized water for 8 minutes to ultrasonically clean it, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0067] S2. Fix the potassium bromide sheet substrate on the sample holder, then close the cover plate of the deposition chamber, vacuum the deposition chamber to a vacuum degree of 5Pa by an air pump, and then fill the deposition chamber with N 2 To standard atmospheric pressure, turn on the substrate heating device to heat the substrate to 90°C;

[0068] S3. Control the distance between the electrode plates to 7mm, turn on the RF power supply, the RF frequency is 500KHz, and the RF power is 50W. 2 The organogallium precursor C 9 h 21 GaO 3 brought into the deposition chamber, the organic gallium ...

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Abstract

The invention discloses a preparation device and preparation process of an electronic film material. The preparation device comprises an RF reactor, an N2 source, an O2 source, a Ga source, a Cu source, a PC terminal and a vacuum pump, and the preparation process comprises the following steps of S1, cleaning and blow-drying a substrate; S2, fixing the substrate, vacuumizing a deposition chamber, and then pumping in N2 to the standard atmospheric pressure; S3, depositing a Ga2O3 film on the surface of the substrate; S4, depositing a Cu-doped Ga2O3 film on the surface of the Ga2O3 film deposited in the step S3; S5, continuously depositing a Ga2O3 film on the surface of the Cu-doped Ga2O3 film deposited in the step S4 to obtain a film with a three-layer structure; and S6, taking out the film and annealing. According to the preparation device, a precursor can be promoted to be deposited on the surface of the substrate under the action of an electrode, the deposition speed and the uniformity degree of the precursor are improved, and a prepared electronic film is good in compactness and high in growth rate through normal-pressure RF-DBD plasma auxiliary pulse chemical vapor deposition in the preparation process. Meanwhile, the normal-temperature and normal-pressure process is more energy-saving.

Description

technical field [0001] The invention relates to the field of electronic thin films, in particular to an electronic thin film material preparation device and a preparation process thereof. Background technique [0002] The 21st century is the era of new materials, energy, materials, and information science are the forerunner and pillar of the new technology revolution. Electronic thin film materials, as thin films of special form materials, have become the material basis of emerging interdisciplinary subjects such as microelectronics, optoelectronics, magnetoelectronics, tool superhardening, sensors, and solar energy utilization, and have widely penetrated into various fields of contemporary science and technology. [0003] Ga 2 o 3 It is a wide bandgap semiconductor material with a direct bandgap. Its bandgap is the most -4.9eV (-250nm), and it has the characteristics of high UV-visible light transmittance, strong breakdown field (-8MV / cm), and low energy loss. , showing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/509C23C16/455C23C16/56C23C16/458
CPCC23C16/40C23C16/5096C23C16/45523C23C16/56C23C16/4585Y02P70/50
Inventor 许志勇苏志聪邰胜斌李艳梅王利萍陈庆华
Owner ZHAOQING UNIV
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