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Preparation method of polycrystalline zinc selenide

A technology of zinc selenide and hydrogen selenide, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of insufficient thickness of zinc selenide products

Active Publication Date: 2021-05-14
安徽中飞科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the problems existing in the background technology, the purpose of this disclosure is to provide a method for preparing polycrystalline zinc selenide, which can effectively solve the problem of insufficient thickness of zinc selenide products

Method used

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Examples

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Effect test

preparation example Construction

[0017] The preparation method of polycrystalline zinc selenide according to the present disclosure includes steps: step 1, surface treatment is performed on a surface of a finished polycrystalline zinc selenide sheet with a thickness of 30 mm to 50 mm as a surface to be deposited to obtain the roughness of the surface Zinc selenide polishing sheet with a hardness less than Ra20, after plasma cleaning the zinc selenide polishing sheet, place it on the graphite substrate of the graphite substrate depositor; step 2, install the zinc material in the crucible; step 3, place the graphite substrate The depositor is installed on the graphite crucible and the graphite substrate depositor and the graphite crucible are connected up and down, and then placed in the chemical vapor deposition vacuum furnace; step 4, at room temperature, the chemical vapor deposition vacuum furnace is ventilated with argon to maintain the chemical vapor deposition vacuum Vacuum in the furnace of the furnace; ...

Embodiment 1

[0032] Preparation of polycrystalline zinc selenide:

[0033]Step 1, carry out surface treatment as a surface of a finished polycrystalline zinc selenide sheet with a thickness of 35mm as a surface to be deposited, obtain a zinc selenide polished sheet with a roughness of the surface of Ra1, and plasma the zinc selenide polished sheet Place on the graphite substrate of the graphite substrate depositor after cleaning;

[0034] Step 2, packing the zinc material into the crucible;

[0035] Step 3, the graphite substrate depositor is installed on the graphite crucible and the graphite substrate depositor and the graphite crucible are connected up and down, and then placed in a chemical vapor deposition vacuum furnace;

[0036] Step 4, at room temperature, the chemical vapor deposition vacuum furnace is vented with argon gas, and the vacuum degree in the chemical vapor deposition vacuum furnace is maintained at 3000Pa;

[0037] Step 5, the crucible is heated at a heating rate of ...

Embodiment 2

[0042] Preparation of polycrystalline zinc selenide:

[0043] Step 1, carry out surface treatment as a surface of a finished polycrystalline zinc selenide sheet with a thickness of 40mm as a surface to be deposited, and obtain a zinc selenide polished sheet whose surface roughness is Ra1, and plasma the zinc selenide polished sheet Place on the graphite substrate of the graphite substrate depositor after cleaning;

[0044] Step 2, packing the zinc material into the crucible;

[0045] Step 3, the graphite substrate depositor is placed on the graphite crucible and the graphite substrate depositor and the graphite crucible are connected up and down, and then placed in a chemical vapor deposition vacuum furnace;

[0046] Step 4, at room temperature, the chemical vapor deposition vacuum furnace is vented with argon gas, and the vacuum degree in the chemical vapor deposition vacuum furnace is maintained at 5000Pa;

[0047] Step 5, the crucible is heated at a heating rate of 0.7°C / ...

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Abstract

The invention provides a preparation method of polycrystalline zinc selenide. The preparation method comprises the following steps that the surface of a polycrystalline zinc selenide sheet with the thickness of 30-50mm is treated to obtain a zinc selenide polished wafer with the roughness being less than Ra20, the zinc selenide polished wafer is cleaned with plasma, and the cleaned zinc selenide polished wafer is put on a graphite substrate; step 2, the zinc material is installed in a crucible; step 3, a graphite substrate depositor is mounted on a graphite crucible and then put in a chemical vapor deposition vacuum furnace; step 4, argon is introduced into the chemical vapor deposition vacuum furnace at room temperature; step 5, the crucible is heated, and the graphite substrate depositor is heated; step 6, the zinc starts to evaporate, hydrogen selenide gas carried by the argon is introduced into the graphite substrate depositor, and argon is introduced into the crucible; and step 7, after zinc evaporation is finished, introducing of the hydrogen selenide gas is stopped, the crucible is cooled, the graphite substrate depositor is cooled, and the final polycrystalline zinc selenide with the overall thickness of 60-100mm is obtained after being discharged from the furnace. According to the invention, the thick polycrystalline zinc selenide material can be prepared.

Description

technical field [0001] The disclosure relates to the technical field of infrared material preparation, in particular to a preparation method of polycrystalline zinc selenide. Background technique [0002] Zinc selenide is a semiconductor light-emitting matrix material with excellent performance, wide band gap, high refractive index, high light transmittance, etc. It is widely used in physics, optics, sensors, optoelectronic materials and other fields. Zinc selenide materials have irreplaceable advantages in traditional optoelectronic applications, such as: blue light-emitting devices, infrared thermal imagers, all-weather optical devices, short-wavelength lasers, and transmission window materials, both in basic research and practical applications. Broad application prospects. [0003] At present, the main method of preparing ZnSe is chemical vapor deposition (CVD), using chemical vapor deposition vacuum furnace equipment, using high-purity zinc and high-purity H 2 Se gas i...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/02
CPCC23C16/306C23C16/02C23C16/0227
Inventor 王和风于金凤刘羊
Owner 安徽中飞科技有限公司
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