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Surface acoustic wave resonator with double-layer POI structure and manufacturing method

A surface acoustic wave and resonator technology, applied in the field of high-performance surface acoustic wave resonators with double-layer POI structure and manufacturing, can solve the problems of low insertion loss, high out-of-band suppression passband edge roll-off, high Isolation, not meeting the high performance requirements of 5G communication, not fully meeting the operating frequency requirements, etc.

Pending Publication Date: 2021-04-30
GUANGDONG CANCHIP TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] 1. The center frequency of high-frequency IHP-SAW is about 3.69GHz, which cannot fully meet the operating frequency requirements of the two communication frequency bands n77 (3.3-4.2GHz) and n78 (3.3-3.8GHz);
[0014] 2. The quality factor Q of high-frequency IHP-SAW is 2500, and the insertion loss is 1.7dB, which does not meet the requirements of 5G communication for low insertion loss, high out-of-band rejection, steep passband edge roll-off, and high isolation;
[0015] 3. FOM value of high frequency IHP-SAW = Q*k 2 =200, does not meet the high performance requirements of 5G communication

Method used

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  • Surface acoustic wave resonator with double-layer POI structure and manufacturing method
  • Surface acoustic wave resonator with double-layer POI structure and manufacturing method
  • Surface acoustic wave resonator with double-layer POI structure and manufacturing method

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Embodiment Construction

[0037] The present invention deposits a top oxide layer and a top high-sonic layer on the top of the IDT electrode. The top oxide layer and the top high-sonic layer together form the top POI structure. The thickness of the top oxide layer is adjusted according to product design requirements, preferably 0.2λ, and the top height The thickness of the sound velocity substrate is adjusted according to the product design requirements, preferably 0.4λ; the electrode is below the top oxide layer, and the electrode is preferably stacked with three metals of Ti, Pt, and Au. The electrode thickness is adjusted according to the product design requirements, preferably 0.07-0.08λ , where the thickness of Ti is thicker than that of Au; under the electrode is a piezoelectric film, and the piezoelectric material is preferably single crystal 30°YX LiTaO 3 、36°YX LiTaO 3 , 42°YX LiTaO 3 , its thickness is adjusted according to product design requirements, preferably 0.3λ; under the piezoelectri...

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Abstract

The invention discloses a surface acoustic wave resonator with a double-layer POI structure and a manufacturing method. The resonator includes a substrate, a bottom POI structure over the substrate, an electrode over the bottom POI structure, and a top POI structure over the electrode. The bottom POI structure comprises a bottom high sound velocity layer, a bottom oxide layer and a piezoelectric film; the top POI structure comprises a top oxide layer and a top high-sound-velocity layer. The resonator manufacturing method comprises the following steps: sequentially depositing a bottom high-sound-velocity layer and a bottom oxide layer on a substrate, performing low-temperature bonding with one surface of a LiTaO3 piezoelectric film obtained by a smart cut method, depositing an electrode on the other surface of the piezoelectric film, and sequentially depositing a top oxide layer and a top high-sound-velocity layer on the electrode. The comprehensive performance of the surface acoustic wave resonator is greatly improved.

Description

technical field [0001] The invention relates to an acoustic wave resonator / filter, in particular to a high-performance surface acoustic wave resonator with a double-layer POI structure and a manufacturing method in the radio frequency front end of a mobile phone. Background technique [0002] In the 5G era, the requirements for data transmission speed are getting higher and higher, and higher requirements are put forward for the various performances of the RF front-end of mobile devices, especially the design of filters is becoming more and more challenging. [0003] Surface Acoustic Wave (SAW), Bulk Acoustic Wave (BAW), and Film Bulk Acoustic Wave (FBAR) are currently the three mainstream technologies in the field of mobile device filters. Among them, the low-frequency and medium-frequency bands are dominated by SAW filters. Its technology has further evolved from Normal-SAW and TC-SAW to IHP-SAW and future XBAR technology. [0004] With its excellent temperature compensa...

Claims

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Application Information

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IPC IPC(8): H03H3/08H03H9/25H03H9/145
CPCH03H3/08H03H9/25H03H9/14538
Inventor 李红浪许欣柯亚兵
Owner GUANGDONG CANCHIP TECH CO LTD
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