Semiconductor device and manufacturing method thereof, integrated circuit and electronic equipment

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, an integrated circuit and electronic equipment. The semiconductor device may include, but is not limited to, a semiconductor substrate, a nanowire channel, a metal gate, a first epitaxial portion, a metal interposer, a second epitaxial portion, a gate, a source, a drain, etc. The nanowire channel is formed on the semiconductor substrate, and the metal gate is arranged around the nanowire channel in a surrounding manner. The first epitaxial portion is formed on the nanowire channel, the metal interposer is arranged around the first epitaxial portion in a surrounding mode, and the second epitaxial portion is arranged around the metal interposer in a surrounding mode. The gate is connected with the metal gate, the source is connected with the second epitaxial portion, and the drain is connected with the semiconductor substrate. The integrated circuit comprises the semiconductor device, and the electronic equipment comprises the semiconductor device or the integrated circuit. The invention can provide the semiconductor transistor with low sub-threshold swing and high switching current ratio, and the semiconductor transistor provided by the invention has the advantages of high on-state current, low leakage current, high integration level and the like.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, and more specifically, the present invention can provide a semiconductor device, a manufacturing method thereof, an integrated circuit, and an electronic device. Background technique [0002] At present, semiconductor devices have been developing toward miniaturization and integration, which requires higher and higher performance of semiconductor devices. Taking semiconductor transistors as an example, conventional transistors often have problems such as insufficient on-state current and high leakage current, which increase the power consumption of the device, and these problems will become more serious as the degree of integration of the device increases. [0003] Therefore, there is an urgent need to provide a semiconductor transistor with higher on-state current and lower leakage current, so as to meet the needs of actual products. Contents of the invention [0004] In...

AI Technical Summary

Problems solved by technology

Taking semiconductor transistors as an example, conventional transistors often have problems such as insufficient on-state current and high leakage current, which increase the power consumption of the device, and these problems will become more serious as the degree of integration of the device increases.

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