Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnet rotating target gun

A technology of rotating target and magnet, applied in ion implantation plating, metal material coating process, coating, etc.

Pending Publication Date: 2021-03-30
长沙元戎科技有限责任公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention proposes a magnet rotating target gun, which solves the problem of both target etching utilization rate and water seal life in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnet rotating target gun
  • Magnet rotating target gun
  • Magnet rotating target gun

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts all involve the protection scope of the present invention.

[0028] Such as Figure 1 to Figure 6 As shown, this embodiment proposes a magnet rotating target gun, which includes a target material 1, a substrate, and a magnetron assembly arranged in sequence from top to bottom in the target gun cavity 13, and the magnetron assembly includes an outer ring Magnet 2, the center magnet 3 that is arranged on the inner side of the outer ring magnet 2 and the cladding layer 4 covering the outer ring magnet 2 and the center magnet 3, and a dr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of vacuum coating equipment, and provides a magnet rotating target gun. The gun comprises a target material, a substrate and a magnetic control assembly which are sequentially arranged in a target gun cavity from top to bottom, and the magnetic control assembly comprises an outer ring magnet, a center magnet arranged in the center of the outer ring magnet and a coating layer coating the outer ring magnet and the center magnet. A driving device connected with the magnetic control assembly is additionally arranged, the driving device drives the magnetic control assembly to rotate or reciprocate, the substrate comprises an upper plate and a lower plate, a sealed cooling cavity is formed between the upper plate and the lower plate, and the lower portion of the substrate is connected with the target gun cavity in a sealed mode through a first sealing ring. By means of the technical scheme, the problem that in the prior art, the target material etching utilization rate is low is solved.

Description

technical field [0001] The invention relates to the technical field of vacuum coating equipment, in particular to a magnet rotating target gun. Background technique [0002] Magnetron sputtering technology is an important technical branch of physical vapor deposition (PVD) technology. It uses the mode of magnetic field and electric field to bind the electrons in the plasma to run in a spiral near the surface of the target, thereby increasing the electron density. Probability of striking a neutral atom to produce an ion. The increased ion density reduces the Crooke dark area, increases the ion bombardment rate of the target, and thus increases the sputtering rate. The ions in the plasma hit the target surface under the action of the electric field, and the material atoms are bombarded from the target material. The emitted material atoms diffuse to the substrate surface and deposit on the surface to form a thin film. The sputtering source is called magnetic Sputtering cathod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35
CPCC23C14/3407C23C14/35
Inventor 李伟
Owner 长沙元戎科技有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products