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Ferroelectric memory capacitance measuring circuit and method

A ferroelectric memory and measurement circuit technology, applied in capacitance measurement, static memory, measurement of electrical variables, etc., can solve the problems of high performance requirements of measurement equipment and high test costs, and achieve simple structure, rapid generation, and improved calculation accuracy. Effect

Pending Publication Date: 2021-03-26
无锡舜铭存储科技有限公司
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Problems solved by technology

In the prior art, if you want to measure ferroelectric capacitance, you usually need to use more complex equipment, and the performance requirements for the measurement equipment are high, and the test cost is high

Method used

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  • Ferroelectric memory capacitance measuring circuit and method
  • Ferroelectric memory capacitance measuring circuit and method
  • Ferroelectric memory capacitance measuring circuit and method

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Embodiment Construction

[0048] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure the inventive concepts of the present invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention is not limited to these specific details. Furthermore, it should be understood that the embodiments shown in the drawings are illustrative representations and are not necessarily drawn to correct scale.

[0049] In this specification, reference to "one embodiment" or "the embodiment...

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Abstract

The invention discloses a ferroelectric memory capacitance measuring circuit, which is arranged on a chip and comprises a reference voltage generating circuit and a capacitance measuring circuit, andis characterized in that the reference voltage generating circuit acquires different reference voltages by connecting resistors in series between a voltage source and the ground, and adopts a pMOS asa circuit switch; the capacitance measuring circuit is a differential or integral circuit composed of a capacitor to be measured, a resistor and a voltage comparator, and the capacitance value of thecapacitor can be calculated by measuring the output of the voltage comparator through the off-chip oscilloscope on the premise that the resistance value is known.

Description

technical field [0001] The invention relates to the ferroelectric memory technology, in particular to a measuring circuit and method for the capacitance of the ferroelectric memory. Background technique [0002] The ferroelectric accumulator FRAM uses the ferroelectric effect of ferroelectric crystals to realize data storage. Currently, commonly used ferroelectric materials mainly include PZT (lead zirconate titanate PbZr x Til -x o 3 ), SBT (strontium bismuth tantalate Sr 1-y Bi 2+x Ta 2 o 9 ) and High-K ferroelectric materials, etc. The polarization characteristics of ferroelectric materials have two stable states. Taking PZT materials as an example, Figure 1a and 1b Two stable states of the PZT ferroelectric material are shown, in which, when a positive electric field is applied, the PZT polarization direction is positive, denoted as state "0", and when a negative electric field is applied, the PZT polarization direction is negative, denoted as is state "1". [...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/50G01R27/26
CPCG11C29/50G01R27/2605
Inventor 徐勤媛唐原徐仁泰
Owner 无锡舜铭存储科技有限公司
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