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InGaAs multi-linear array photosensitive chip and application thereof

A linear and photosensitive technology, applied in the field of infrared detectors, can solve problems such as the complex structure of InGaAs linear detectors, the level of instrument integration needs to be further improved, and the impact on long-term stability and reliability of instruments, so as to improve multispectral imaging Ability and recognition efficiency, improved stability and long-term reliability, simple structure effect

Pending Publication Date: 2021-03-26
云南昆物新跃光电科技有限公司
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AI Technical Summary

Problems solved by technology

Its advantage is low cost, and its disadvantage is that there are moving parts inside the instrument, which affects the long-term stability and reliability of the instrument
[0004] (2) Using InGaAs linear focal plane detector components, gratings, mirrors, etc., the instrument is an all-solid-state spectroscopic system, its stability and reliability have been greatly improved, but the integration level of the instrument needs to be further improved
[0005] To sum up, the current InGaAs linear detectors have problems such as complex structure, poor reliability and stability, and low integration, which are not conducive to wider applications.

Method used

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  • InGaAs multi-linear array photosensitive chip and application thereof

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Embodiment 1

[0022] An InGaAs detector assembly capable of simultaneously realizing multi-spectral imaging includes an InGaAs multi-line array photosensitive chip 1, a readout circuit 2, a refrigerator 4, a temperature measuring resistor, a getter 3, a packaging tube shell 6, a window 5 and a cover plate 7;

[0023] InGaAs multi-line photosensitive chip 1 is an InGaAs chip with band-pass films of different sizes deposited on different line photosensitive elements; the photosensitive element of InGaAs multi-line photosensitive chip 1 is a PIN-type circular structure, and the diameter of the circle is 50μm, the line size is 256×2; the composition of the band-pass film coated on each line photosensitive element is a composite film composed of titanium dioxide film layer and silicon dioxide film layer, and the thickness of the band-pass film of the two lines is respectively 2500nm and 2850nm, the spectrum of the two channels is 1230nm±15nm and 1300nm±15nm, the spectral bandwidth of each channe...

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Abstract

The invention relates to an InGaAs multi-linear array photosensitive chip and an application thereof, and belongs to the technical field of infrared detectors. The multi-linear array photosensitive chip is an InGaAs chip with band-pass films having different sizes and components and deposited on different linear array photosensitive elements, can realize simultaneous absorption of spectra of different wave bands, is also beneficial to simplifying the structure of a spectrometer and improving the stability and long-term reliability of the instrument, and has important significance for the technical development of a micro spectrometer. According to the detector assembly based on the InGaAs multi-linear array photosensitive chip, spectral information of different wave bands can be collected at the same time in a linear scanning mode, the multi-spectral imaging capacity and the recognition efficiency of the detector assembly are greatly improved, the structure is simple, and good stabilityand high reliability are achieved; the InGaAs multi-linear array photosensitive chip can be widely applied to target identification, biomedicine, scientific research, satellite remote sensing and thelike.

Description

technical field [0001] The invention relates to an InGaAs multi-line photosensitive chip capable of simultaneously absorbing different band spectra and its application in a multi-spectral imaging detector, belonging to the technical field of infrared detectors. Background technique [0002] Miniature spectrometers have a wide range of application requirements in agriculture, food, industry and other fields. They are ideal instruments for on-site quality inspection and on-line inspection. . The InGaAs detector has the advantages of uncooled room temperature operation, high detection rate and good uniformity in the 0.9 μm ~ 1.7 μm band, and has become an ideal choice for miniature near-infrared spectrometer chips. Micro-spectrometers based on short-wave infrared InGaAs detectors usually use the following two technical solutions: [0003] (1) Using InGaAs unit detectors, as well as scanning and stepping devices, gratings, mirrors, etc., to achieve spectral measurement. Its a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J3/28G01J3/02
CPCG01J3/2823G01J3/02
Inventor 范明国朱琴李志华齐浩洋李德香龚晓霞袁俊太云见黄晖
Owner 云南昆物新跃光电科技有限公司
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