InGaAs multi-linear array photosensitive chip and application thereof
A linear and photosensitive technology, applied in the field of infrared detectors, can solve problems such as the complex structure of InGaAs linear detectors, the level of instrument integration needs to be further improved, and the impact on long-term stability and reliability of instruments, so as to improve multispectral imaging Ability and recognition efficiency, improved stability and long-term reliability, simple structure effect
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[0022] An InGaAs detector assembly capable of simultaneously realizing multi-spectral imaging includes an InGaAs multi-line array photosensitive chip 1, a readout circuit 2, a refrigerator 4, a temperature measuring resistor, a getter 3, a packaging tube shell 6, a window 5 and a cover plate 7;
[0023] InGaAs multi-line photosensitive chip 1 is an InGaAs chip with band-pass films of different sizes deposited on different line photosensitive elements; the photosensitive element of InGaAs multi-line photosensitive chip 1 is a PIN-type circular structure, and the diameter of the circle is 50μm, the line size is 256×2; the composition of the band-pass film coated on each line photosensitive element is a composite film composed of titanium dioxide film layer and silicon dioxide film layer, and the thickness of the band-pass film of the two lines is respectively 2500nm and 2850nm, the spectrum of the two channels is 1230nm±15nm and 1300nm±15nm, the spectral bandwidth of each channe...
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