Preparation method of quantum dot material

A quantum dot material and quantum dot technology, which are applied in the field of flat panel display, can solve the problem of low input and output, and achieve the effects of cost saving, reduction of surface lattice defects, and good optoelectronic performance.

Inactive Publication Date: 2021-03-23
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The main purpose of the present invention is to provide a method for preparing quantum dot materials, aiming to solve the technical problem of relatively low input and output existing in the existing quantum dot synthesis process

Method used

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  • Preparation method of quantum dot material
  • Preparation method of quantum dot material

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preparation example Construction

[0018] A preparation method of quantum dot material, such as figure 1 shown, including the following steps:

[0019] S01, providing quantum dot cation precursor solution and quantum dot anion precursor solution;

[0020] S02. In an inert gas atmosphere, mix the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature to prepare a mixed solution containing quantum dot crystal nuclei; then, mix the quantum dot anion precursor solution containing The temperature of the mixed solution of quantum dot crystal nuclei is adjusted to the second temperature to carry out quantum dot growth;

[0021] Wherein, in the step of mixing the quantum dot cation precursor solution and the quantum dot anion precursor solution at a first temperature, add a mixture of primary amine and secondary phosphine and the quantum dot cation precursor solution and / or Or the quantum dot anion precursor solution is mixed;

[0022] The secondary phosphine has th...

Embodiment 1

[0046] This embodiment prepares a kind of preparation method of quantum dot material CdZnSe, specifically comprises the following steps:

[0047] S11. Weigh 0.2mmol of CdO, 5mmol of ZnO, 5mL of oleic acid and 15mL of octadecene, add them to a 50mL three-necked bottle for mixing, and heat to 240°C to obtain a clear quantum dot cation precursor solution; then , adding 0.5mL di-tert-butylphosphine to the quantum dot cation precursor solution for mixing, and vacuuming for 30min to remove water vapor and air in the solution to obtain a quantum dot cation precursor solution containing di-tert-butylphosphine;

[0048] S12, weighing the selenium element and TBP, dissolving the selenium element in the TBP, and preparing a quantum dot anion precursor solution with a concentration of 1M;

[0049] S13. Under a nitrogen atmosphere, raise the temperature of the quantum dot cation precursor solution containing di-tert-butylphosphine prepared in step S11 to 310°C, quickly inject 3mL of the qu...

Embodiment 2

[0052] In this embodiment, a quantum dot material CdSe is prepared, which specifically includes the following steps:

[0053] S21. Weigh 0.5mmol of CdO, 1mL of oleic acid and 9mL of octadecene, add them into a 25mL three-necked bottle for mixing, and heat to 240°C to obtain a clear quantum dot cation precursor solution; then, in the quantum dot Add 1mL n-octylamine to the cationic precursor solution for mixing, vacuumize for 20min to remove water vapor and air in the solution, and obtain a quantum dot cationic precursor solution containing n-octylamine;

[0054] S22, weighing the selenium element and TOP, dissolving the selenium element in the TOP, and preparing a quantum dot anion precursor solution with a concentration of 1M;

[0055] S23. Under a nitrogen atmosphere, raise the temperature of the n-octylamine-containing quantum dot cation precursor solution prepared in step S21 to 280° C., quickly inject the quantum dot anion precursor solution prepared in step S22, and then...

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Abstract

The invention belongs to the technical field of panel display, and particularly relates to a preparation method of a quantum dot material. The preparation method provided by the invention comprises the following steps of: providing a quantum dot cationic precursor solution and a quantum dot anionic precursor solution; in an inert gas atmosphere, mixing the quantum dot cation precursor solution andthe quantum dot anion precursor solution at a first temperature to prepare a mixed solution containing quantum dot crystal nucleuses; and adjusting the temperature of the mixed solution containing the quantum dot crystal nucleus to a second temperature, and carrying out quantum dot growth. In the step of mixing the quantum dot cationic precursor solution and the quantum dot anionic precursor solution at the first temperature, a mixture of primary amine and secondary phosphine is added to be mixed with the quantum dot cationic precursor solution and / or the quantum dot anionic precursor solution, wherein the secondary phosphine has a general formula RR'PH2, R is selected from alkyl or cycloalkyl, and R' is selected from alkyl or cycloalkyl. According to the method, a mixture of primary amine and secondary phosphine is added, so that high-yield synthesis of the quantum dot material is realized.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a preparation method of a quantum dot material. Background technique [0002] Quantum dots with different emission wavelengths can be produced through size regulation as semiconductor nano-fluorescent materials. The potential applications of their excellent optical properties in light-emitting diode devices, lasers, solar cells, biomolecular labeling, and immunoassays have become research hotspots in recent years. After nearly forty years of research, the synthesis process of quantum dot materials has made significant progress, and high-quality quantum dots can be synthesized with high quantum yield (QY>90%) and uniform size distribution (±5%), however , the input and output of the synthesis process of the existing quantum dot material is relatively low (<50%), resulting in a lower yield of quantum dots. Contents of the invention [0003] The main ...

Claims

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Application Information

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IPC IPC(8): C09K11/88B82Y20/00B82Y40/00C01B19/00C01B19/04
CPCB82Y20/00B82Y40/00C01B19/002C01B19/007C01P2002/84C01P2004/64C01P2006/60C09K11/883
Inventor 周礼宽
Owner TCL CORPORATION
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