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A dfb laser working at high temperature and method for growing epitaxial structure

A DFB laser and epitaxial structure technology, which is applied to the structure of lasers, semiconductor lasers, and optical resonators, can solve the problems of laser power drop and achieve the effect of improving high temperature characteristics

Active Publication Date: 2021-11-02
全磊光电股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The bandgap width of the AlInAs material matched with InP is about 1.45eV, and the bandgap width of the AlGaInAs confinement layer material is about 1.2eV. There is a higher conduction band step between the AlInAs electron blocking layer and the AlGaInAs MQW, which limits the carrier The transition out of the well greatly improves the high-temperature characteristics of the laser, but high-temperature electrons still have a greater probability of transitioning out of the MQW, resulting in a decrease in laser power at high temperatures

Method used

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  • A dfb laser working at high temperature and method for growing epitaxial structure
  • A dfb laser working at high temperature and method for growing epitaxial structure
  • A dfb laser working at high temperature and method for growing epitaxial structure

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Embodiment Construction

[0024] The embodiments of the present invention will be described below by specific embodiments, and those skilled in this specification can easily understand other advantages and efficacy of the present invention.

[0025] An example embodiment will now be described more fully with reference to the accompanying drawings. However, an example embodiment can be implemented in a variety of forms and is not to be construed as being limited to the examples set forth herein; in contrast, the present invention will make the present invention will be more comprehensive and complete, and the concept of example embodiments is fully conveyed A technician to those skilled in the art. The features, structures, or characteristics described may be incorporated in one or more embodiments in any suitable manner. In the following description, there is provided a number of specific details to give a sufficient understanding of the embodiments of the present invention. However, those skilled in the a...

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Abstract

The invention discloses a DFB laser that improves the high temperature characteristics of the laser. The epitaxial structure of the DFB laser includes an InP substrate, and a buffer layer, a grating layer, a lower confinement layer, a lower waveguide layer, and a quantum well are sequentially arranged on the InP substrate from bottom to top. , upper waveguide layer, electron blocking layer, corrosion barrier layer, ridge waveguide layer, barrier gradient layer and ohmic contact layer, and the electron blocking layer is AlAs0.56Sb0.44 and quaternary composition of AlAs0.56Sb0.44 and AlxGa(1 ‑x) AsySb(1‑y) materials form a superlattice. The epitaxial structure of the DFB laser uses energy band engineering to design a superlattice electron barrier layer with a wide bandgap to limit the carriers. On the one hand, the superlattice is used to reduce the valence band barrier, which is beneficial for hole injection into the active region, and can effectively improve the high temperature characteristics of the laser. The DFB laser of the present invention can work normally in the temperature range of -40~115°C.

Description

Technical field [0001] The present invention relates to the field of DFB lasers, and more particularly to a DFB laser that can operate in a high temperature state and a growth method thereof. Background technique [0002] With the rapid development of optical communication, there is no cooling wide temperature single-mode DFB laser to become a key device for long distance and large capacity fiber optic communications, widely used in the field of access network, data center, 5G mobile communication. The DFB laser establishes a Prague grating inside the semiconductor, and the distribution feedback of light is used to achieve the selection of single-length, with high speed, narrow line width and dynamic single-length mode operation, and the DFB laser can range in wider operating temperature and operating current range. Inhibition of the mode hopping of the ordinary FP laser, greatly improve the noise characteristics of the device. The DFB laser uses raster modulation of refractive i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/20H01S5/12C23C16/44C23C16/30
CPCC23C16/301C23C16/44H01S5/12H01S5/2009H01S2304/02H01S2304/04
Inventor 单智发张永姜伟陈阳华
Owner 全磊光电股份有限公司
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