Bearing disc and temperature control device

Abstract

The invention discloses a bearing disc and a temperature control device. A mounting hole is formed in the center of the bearing disc, the bearing disc comprises a sealing surface used for being in contact sealing with a reaction cavity in semiconductor equipment, an air channel surrounding the mounting hole is further formed in the bearing disc, an air inlet and an air outlet are formed in the face, deviating from the sealing surface, of the bearing disc, the air inlet and the air outlet are both communicated with the air channel, and according to preset conditions, temperature control air with the preset temperature can be fed into the air channel from the air inlet and exhausted from the air outlet. The bearing disc can adapt to a wafer processing technology, the bearing disc and components installed on the bearing disc are prevented from being corroded, the wafer is prevented from being polluted, and normal operation of the technology is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a carrier plate and a temperature control device. Background technique [0002] During the processing of the wafer, it is usually necessary to move the carrier tray carrying the wafer from room temperature to the opening of the reaction chamber for heat treatment. Before the process starts, in order to evacuate the impurity gas in the reaction chamber, a small amount of water vapor and hydrogen chloride gas are usually introduced into the reaction chamber. In the early stage of the heat treatment process of the wafer, because the temperature of the carrier plate is low, the temperature of the reaction chamber is usually high, generally hundreds or even thousands of degrees Celsius, which causes water vapor to condense when it contacts the carrier plate, and at the same time , hydrogen chloride gas will dissolve in water to form hydrochloric acid, and the materia...

AI Technical Summary

Problems solved by technology

In the early stage of the heat treatment process of the wafer, because the temperature of the carrier plate is low, the temperature of the reaction chamber is usually high, generally hundreds or even thousands of degrees Celsius, which causes water vapor to condense when it contacts the carrier plate, and at the same time , hydrogen chloride gas will dissolve in water to form hydrochloric acid, and the material of the carrier plate is usually stainless steel, which will cause the carrier plate to be corroded, and impurities such as ferric chloride will be generated, which will pollute the wafer and shorten the service life of the carrier plate

In the later stage of the wafer heat treatment process, affected by the heat in the reaction chamber, the temperature of the carrier plate will gradually increase, which will easily cause damage to the components installed on the carrier plate, pollute the wafer, and affect the normal process.

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