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GaN-based detector

A detector, n-type technology, applied in the field of detectors, can solve the problems affecting the stability and response speed of the detector, poor ohmic contact performance, poor ohmic contact performance, etc.

Pending Publication Date: 2021-02-26
MAANSHAN JASON SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the poor ohmic contact performance of the p-type electrode and n-type electrode of the GaN-based detector in the prior art, and its poor ohmic contact performance affects the stability and response speed of the detector. Can not well meet the needs of practical use, and the proposed GaN-based detector

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  • GaN-based detector

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0022] In describing the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", " The orientation or positional relationship indicated by "outside", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, so as to Specific orientation configurations and operations, therefore, are not to be construed as limitations on the invention.

[0023] refer to figure 1...

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Abstract

The invention relates to the technical field of detectors, and discloses a GaN-based detector, which comprises a substrate, a GaN buffer layer, an n-type ohmic layer, an intrinsic GaN active layer anda p-type ohmic layer, and is characterized in that the substrate, the GaN buffer layer, the n-type ohmic layer, the intrinsic GaN active layer and the p-type ohmic layer are sequentially connected from bottom to top, and an n-type contact layer is arranged on the n-type ohmic layer; a p-type contact layer is arranged on the p-type ohmic layer, a passivation layer covers the n-type ohmic layer, the intrinsic GaN active layer and the p-type ohmic layer, and the intrinsic GaN active layer and the p-type ohmic layer are of frustum-shaped structures. The ohmic contact performance is enhanced, andthe stability and the response speed of the detector are ensured.

Description

technical field [0001] The invention relates to the technical field of detectors, in particular to GaN-based detectors. Background technique [0002] In recent years, GaN-based materials have become mainstream materials and research hotspots in the field of detectors due to their wide direct bandgap, stable chemical properties, high breakdown electric field, and electron saturation rate. GaN-based detectors replace vacuum tubes for UV detection and have great application potential. [0003] The ohmic contact performance of the p-type electrode and the n-type electrode of the existing GaN-based detector is poor, and its poor ohmic contact performance affects the stability and response speed of the detector, and cannot well meet the actual use requirements . Contents of the invention [0004] The purpose of the present invention is to solve the poor ohmic contact performance of the p-type electrode and n-type electrode of the GaN-based detector in the prior art, and its po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0216H01L31/0236H01L31/105
CPCH01L31/022408H01L31/02161H01L31/02366H01L31/105
Inventor 杨天鹏康建郑远志陈向东
Owner MAANSHAN JASON SEMICON CO LTD
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