Display panel and method for producing the same

A display panel and substrate substrate technology, applied in photometry, semiconductor/solid-state device manufacturing, optical radiation measurement, etc., can solve the problems of unreasonable design of the film layer of the display device, high production cost, and complicated preparation process. Achieve the effects of increasing the effective light absorption area, improving the detection sensitivity, and simplifying the preparation process

Active Publication Date: 2022-07-12
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Description
  • Claims
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Problems solved by technology

[0005] The disclosed embodiments provide a display panel and a method for manufacturing the display panel, in order to solve the problems in the prior art that when the infrared sensitive display device is prepared, the internal structure of the display device and the design of each film layer are unreasonable, and the display device performs infrared detection. Infrared light cannot be sensed and transmitted accurately, the sensitivity of infrared photosensitive detection is low, and the preparation process is more complicated, and the production cost is higher.

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  • Display panel and method for producing the same
  • Display panel and method for producing the same
  • Display panel and method for producing the same

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Embodiment Construction

[0040] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some, but not all, embodiments of the present disclosure. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present disclosure.

[0041] In the description of the present disclosure, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "top", "bottom", "front", " rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc., or The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present disclosure a...

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Abstract

The present disclosure provides a display panel and a method for fabricating the display panel. The display panel includes a base substrate and a thin film transistor device layer, wherein the thin film transistor device layer includes an extension, a fourth electrode layer and a first via hole, and the fourth electrode layer passes through The first via hole is connected with the extension part and forms a Schottky junction structure. The light receiving performance of each film layer in the display panel is effectively improved, and the detection sensitivity of the infrared detection type display panel is improved. Meanwhile, the preparation process of the display panel is simple and the production cost is low.

Description

technical field [0001] The present disclosure relates to the technical field of display panel display, and in particular, to a display panel and a method for fabricating the display panel. Background technique [0002] With the continuous improvement of the display technology, the display technology of the liquid crystal display device has also been developed, and the display device has been widely used in various electronic devices. [0003] Existing display panels not only need to have general usage requirements such as high resolution, wide viewing angle, and low power consumption, but also need to have other diversified functions, such as the display panel can perform human-computer interaction, infrared perception and detection, etc. rich functions, etc. At present, the display device with infrared photosensitive function has become one of the development directions. When preparing an infrared photosensitive functional display panel, polysilicon and amorphous silicon ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77G02F1/1333G02F1/1362G02F1/1368G01J1/44
CPCH01L27/1214H01L27/1259G02F1/136227G02F1/1368G02F1/1333G01J1/44G01J2001/4473
Inventor 艾飞龚帆宋继越宋德伟
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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