Multi-flow-channel gas ejector with tandem cooling chambers

Abstract

The invention relates to a multi-flow-channel gas ejector with tandem cooling chambers, which comprises a plurality of cooling chambers annularly arranged in an ejection shell, wherein at least one overflow opening is formed in the top of the side wall of each cooling chamber to be communicated with the adjacent cooling chamber, a plurality of exhaust pipes are arranged in each cooling chamber, and the openings of the exhaust pipes are exposed out of the ejection shell. According to the invention, each exhaust pipe can be soaked in the cooling liquid to achieve the effect of controlling the temperature of the whole exhaust pipe, and the exhaust pipe protrudes out of the bottom of the multi-flow-channel gas ejector of the tandem cooling chambers and is matched with the concave structure ofa susceptor, so that dust and sediments on the edge of a wafer can be effectively swept, and the manufacturing yield of products is improved.

Description

technical field [0001] The invention relates to a wafer coating technology, in particular to a multi-channel gas injector with serial cooling chambers. Background technique [0002] With the development of semiconductor technology, semiconductor process technology has also become more mature, so that electronic devices composed of more semiconductors can be made more compact and have more functions. [0003] The process of semiconductor technology will go through yellow light, etching, diffusion and then enter the generation of thin film. In the thin film deposition process of semiconductor wafers, the wafers are set in the vacuum reaction chamber, and the gas injector is used to inject the reaction gas horizontally onto the wafer, so as to use the physical or chemical reaction caused by heating, so that the wafer deposited thin film. [0004] During the deposition process, in order to avoid the influence of high temperature on the gas injector when the wafer is heated, wa...

AI Technical Summary

Problems solved by technology

However, this method of water-cooling equipment can only cover the outermost jet tube, and cannot effectively cool the inner jet tube of the gas injector, resulting in poor overall temperature control effect

[0005] In addition, the current design of the injector is to let the gas source gas be sprayed in a 360-degree circle in a horizontal manner, so it is easy to have a dead angle of air flow when depositing a thin film. For example, the upper edge of the side of the wafer is the front end that contacts the gas. Therefore, it is particularly easy to accumulate reactants, and it is easy to accumulate dust over time

And this area is the air upstream section of the film forming area. Once dust is generated, the dust is easily blown to the surface of the entire wafer with the air flow, causing dust particle defects on the chip and affecting the process yield.

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