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Preparation method of horizontal ordered carbon nanotube array micro supercapacitor

A nanotube array and supercapacitor technology, which is applied in the field of preparation of on-chip horizontally ordered carbon nanotube array micro-supercapacitors, can solve the problem of not meeting the requirements of miniaturization, limiting the performance of micro-supercapacitors, and the difficulty of micro-supercapacitors. Capacitor preparation and other issues, to achieve the effect of improving fast charge and discharge capacity, reducing volume, and improving specific surface area utilization

Inactive Publication Date: 2021-02-12
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

For example, Kim et al. prepared a planar micro-supercapacitor of multi-walled carbon nanotubes by spraying method, which showed good mechanical properties and cycle performance. However, the prepared carbon nanotubes were disordered carbon nanotubes, so this also limited Performance of Micro Supercapacitors
Hu et al. used CVD carbon nanotube supercapacitors to show good electrochemical performance, but the CVD growth conditions are relatively harsh, and the prepared electrode materials are not easy to prepare micro supercapacitors.
Sun et al. reported a planar micro-supercapacitor based on vertically oriented carbon nanotubes, which can operate well at different high scan rates and demonstrated that it can be integrated with other in-plane devices on the same substrate, however, the vertically oriented The thickness of the carbon nano film can not meet the requirements of miniaturization very well

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  • Preparation method of horizontal ordered carbon nanotube array micro supercapacitor
  • Preparation method of horizontal ordered carbon nanotube array micro supercapacitor

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Embodiment 2

[0026] (1) First will have SiO 2 Thin Si substrate cut into 1 x 0.7cm 2 The slices were ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes to remove SiO 2 Organic matter or other impurities on the Si surface of the thin layer; then the cleaned SiO 2 The thin-layer Si substrate was etched in an oxygen plasma etching machine with a power of 300W and a vacuum of 120mTorr for 90s to make the surface hydrophilic.

[0027] (2) Treated with SiO 2 A thin layer of Si substrate was vertically inserted into a 2 μg / ml carbon nanotube dispersion, placed in a vacuum desiccator, and dried at 0.4 atm for 48 hours to obtain a horizontally ordered carbon nanotube film.

[0028] (3) The sample obtained in step (2) is spin-coated with a spin-coated photoresist (AZ5214) on the target substrate after the spin-coating parameter is 500r / s forward and then 4000r / s for 5s and 35s; Place on a heating plate at 90°C for 2 minutes to heat and dry; use a UV lithography machine...

Embodiment 3

[0033] (1) will first have SiO 2 Thin Si substrate cut into 1 x 0.7cm 2 The slices were ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes to remove SiO 2 Organic matter or other impurities on the Si surface of the thin layer; then the cleaned SiO 2 The thin-layer Si substrate was etched in an oxygen plasma etching machine with a power of 300W and a vacuum of 120mTorr for 90s to make the surface hydrophilic.

[0034] (2) Treated with SiO 2 A thin layer of Si substrate was vertically inserted into a 2 μg / ml carbon nanotube dispersion, placed in a vacuum desiccator, and dried at 0.4 atm for 48 hours to obtain a horizontally ordered carbon nanotube film.

[0035] (3) The sample obtained in step (2) is spin-coated with a spin-coated photoresist (AZ5214) on the target substrate after the spin-coating parameter is 500r / s forward and then 4000r / s for 5s and 35s; Place on a heating plate at 90°C for 2 minutes to heat and dry; use a UV lithography machine...

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Abstract

The invention discloses a preparation method of a horizontal ordered carbon nanotube array micro supercapacitor. The device has an interdigital planar configuration. The preparation method comprises the following specific process steps of firstly, carrying out cutting, cleaning and hydrophilic pretreatment on a Si substrate with a SiO2 thin layer, then depositing a horizontally ordered carbon nanotube film on the substrate by using a vacuum evaporation self-assembly method, and then carrying out interdigital electrode patterning treatment, including designing an interdigital electrode mask, photoetching and depositing a current collector, and etching by using oxygen plasma to obtain the horizontal ordered carbon nanotube array film microelectrode, and finally, packaging a gel electrolyte preparation device, including preparing PVA-based gel electrolyte and coating the electrolyte on an electrode for packaging, so as to prepare the on-chip integrated horizontal ordered carbon nanotube array micro supercapacitor. The preparation of the on-chip integrated micro super capacitor with a controllable device structure can be realized.

Description

technical field [0001] The invention relates to the field of micro-nano processing technology, in particular to a method for preparing a micro-supercapacitor integrated on a chip with horizontally ordered carbon nanotube arrays. Background technique [0002] With the rapid development of modern industry, the technical development of miniature portable electronic devices has increased the demand for micro energy storage devices, so micro supercapacitors have emerged as the times require. Compared with the traditional supercapacitor with a sandwich structure, the micro supercapacitor usually chooses a planar structure with interdigitated electrodes, in which the electrolyte ions between the electrodes can be conveniently and quickly transported to provide ultra-high power density, This in-plane cross structure can effectively maintain the advantages of the conventional structure and maintain its stability with millions of duty cycles. The most obvious advantage of micro-super...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/84H01G11/86
CPCH01G11/84H01G11/86Y02E60/13
Inventor 陈刚韩赛垒张家振吴向东徐煌
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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