MOSFET-TFET hybrid 8T SRAM unit circuit

Abstract

The invention discloses a MOSFET-TFET (Metal Oxide Semiconductor Field Effect Transistor) hybrid 8T SRAM (Static Random Access Memory) unit circuit. A power supply VDD is connected with a source electrode of a PTFET P1, and the power supply VDD is also connected with a source electrode of a PTFET P2; a drain electrode of the PTFET P1 is connected with a drain electrode of the NMOSFET N5, a grid electrode of the PTFET P2, the grid electrode of the NTFET N2 and a drain electrode of the NTFET N1; a drain electrode of the PTFET P2 is connected with a grid electrode of the PTFET P1, a grid electrode of the NTFET N1, a drain electrode of the NTFET N2, a source electrode of an NMOSFET N6 and a source electrode of an NTFET N4. According to the circuit, a mode of mixing a TFET device and an MOSFETdevice is adopted, and positive bias P-I-N current occurring when the TFET is used as an SRAM transmission tube is eliminated.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a MOSFET-TFET hybrid 8T SRAM unit circuit. Background technique [0002] With the continuous development of the integrated circuit industry and the continuous improvement of chip integration, the power consumption problem of traditional MOSFETs (metal-oxide semiconductor field effect transistors) has become more prominent. The direct way to reduce power consumption is to reduce the power supply voltage of the circuit. However, developing integrated circuits on a nanoscale platform and lowering the power supply voltage of MOSFETs is facing great challenges. The subthreshold swing (Subthreshold Swing, SS) limited by the Boltzmann distribution seriously affects the switching rate of the device. As the power supply voltage decreases, the leakage current of the MOSFET increases exponentially, resulting in an exponential increase in static power consumption. Therefore...

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Problems solved by technology

However, due to the structural characteristics of TFETs, there are still some challenges in circuit design using TFETs. TFETs have unidirectional conductivity, which will do different doping between the P and N regions of the MOS transistor. Due to the source and drain doping The asymmetry of the TFET has a forward biased P-I-N current that is not controlled by the gate, which increases the static power consumption of the circuit and also affects the stability of the storage node in the hold state, but there is no corresponding solution in the prior art

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