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ZnO-based low-voltage high-nonlinearity voltage-sensitive ceramic co-fired with pure silver inner electrode and preparation method thereof

A technology based on pressure-sensitive ceramics and pressure-sensitive ceramics, which is applied in the field of ZnO-based low-voltage and high-non-linear pressure-sensitive ceramic materials and its preparation, can solve the problems of high cost, achieve the effects of low energy consumption, simple process, and wide application prospects

Inactive Publication Date: 2021-01-15
YANTAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, ZnO-based low-voltage varistors widely used in electronic products, information technology and other fields are mostly multilayer chip varistors (Wang Lanyi, Lu Chengxiang, Jing Zhigang, Du Hui, Tang Guoyi, "Multilayer chip varistors Application of varistors", Sensors and Microsystems, 2006, 25[5]: 1-4.), but since the sintering temperature of the ZnO-based varistors used is higher than 1000°C, the inner electrodes can only use pure Pd Or Pd30 / Ag70 system can be co-fired, which is expensive

Method used

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  • ZnO-based low-voltage high-nonlinearity voltage-sensitive ceramic co-fired with pure silver inner electrode and preparation method thereof
  • ZnO-based low-voltage high-nonlinearity voltage-sensitive ceramic co-fired with pure silver inner electrode and preparation method thereof
  • ZnO-based low-voltage high-nonlinearity voltage-sensitive ceramic co-fired with pure silver inner electrode and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0045] Example 1: A ZnO-based low-voltage and high-nonlinear varistor ceramic that can be co-fired with pure silver inner electrodes and its preparation method

[0046] according to figure 1 The process flow shown, the preparation does not add Bi-Sb-O and x = 1 ZBCM- x Bi-Sb-O varistor ceramics, the specific steps are as follows:

[0047] (1) Weigh ZnO and Bi according to the molar ratio of chemical composition 2 o 3 、Co 2 o 3 , MnO 2 raw material;

[0048] (2) Weigh Bi-Sb-O according to the total mass ratio taken in (1), i.e. (ZnO + Bi 2 o 3 +Co 2 o 3 + MnO 2 ) total mass × x %= mass of Bi-Sb-O, x = 1;

[0049] (3) Using absolute ethanol as a solvent, put the raw materials weighed in (1) and (2) into a ball mill jar and mix them for 8 hours;

[0050] (4) After ball milling, put the slurry in an oven to dry at 70°C;

[0051] (5) Add 3wt% PVA binder to the dried powder, and press it into a thin disc with a diameter of 12mm and a thickness of 0.8-1.5mm;

[00...

Embodiment 2

[0060] Example 2: A ZnO-based low-voltage and high-nonlinear varistor ceramic that can be co-fired with pure silver inner electrodes and its preparation method

[0061] according to figure 1 The process flow shown, the preparation x =3 and 5 ZBCM- x Bi-Sb-O varistor ceramics, the specific steps are as follows:

[0062] (1) Weigh ZnO and Bi according to the molar ratio of chemical composition 2 o 3 、Co 2 o 3 , MnO 2 raw material;

[0063] (2) Weigh Bi-Sb-O according to the total mass ratio taken in (1), i.e. (ZnO + Bi 2 o 3 +Co 2 o 3 + MnO 2 ) total mass × x %= mass of Bi-Sb-O, x = 3, 5;

[0064] (3) Using deionized water as a solvent, put the raw materials weighed in (1) and (2) into a ball mill jar and mix them for 10 hours;

[0065] (4) After ball milling, put the slurry in an oven to dry at 100°C;

[0066] (5) Add 3wt% PVA binder to the dried powder, and press it into a thin disc with a diameter of 12mm and a thickness of 0.8-1.5mm;

[0067] (6) Heat the...

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Abstract

The invention discloses a ZnO-based low-voltage high-nonlinearity voltage-sensitive ceramic material which is high in nonlinearity and can be co-fired with a pure silver inner electrode and a preparation method thereof. The preparation method comprises the following steps: 1) keeping the temperature at 750 DEG C for 2 hours according to a molar ratio of Bi2O3 to Sb2O3 of 13.8, and synthesizing a Bi-Sb-O additive in advance; 2) selecting ZnO, Bi2O3, Co2O3, MnO2, Sb2O3 and Bi-Sb-O as raw materials, weighing corresponding raw materials according to a formula of 98 mol% ZnO (99.0%) + 0.5 mol% Bi2O3 (99%) + 1 mol% MnO2 (98.8%) + 0.5 mol% Co2O3 (99.0%) + x wt% Bi-Sb-O (0 < x < = 5); and (3) molding the uniformly ball-milled and mixed mixture by using a solid-phase sintering method, removing plastic, and sintering at the temperature of 900 DEG C for 2-5 hours to obtain the ZnO-based voltage-sensitive ceramic material. The comprehensive performance of the ZnO-based piezoresistor material obtained by the invention is as follows: the voltage-sensitive field intensity is as low as 235V / mm, the nonlinear coefficient alpha is as high as 53.0, and the leakage current IL is as low as 0.005 mu A.In addition, the preparation method has the advantages of being simple in process, low in energy consumption, environmentally friendly, capable of being co-fired with a pure silver inner electrode andthe like.

Description

technical field [0001] The invention relates to a novel functional ceramic, in particular to a ZnO-based low-voltage and high-non-linear pressure-sensitive ceramic material which is highly nonlinear and can be co-fired with a pure silver inner electrode and a preparation method thereof. Background technique [0002] ZnO-based varistor ceramic resistors use ZnO as the main raw material, adding a small amount of Bi 2 o 3 ,Co 2 o 3 , MnO 2 , Cr 2 o 3 Such oxides are polycrystalline ceramics sintered by traditional ceramic preparation processes. Because of its high nonlinear coefficient, fast response, small leakage current and low manufacturing cost, it has become one of the most widely used varistor materials (Wu Weihan, He Jinliang, Gao Yuming, "Metal Oxide Nonlinear Resistors Characteristics and Applications", Tsinghua University Press, 1998). [0003] With the development of miniaturization and integration of electronic products, the demand for low-voltage varistors...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/634
CPCC04B35/453C04B35/63416C04B2235/3298C04B2235/3294C04B2235/3275C04B2235/3267C04B2235/442C04B2235/96
Inventor 初瑞清崔方芳徐志军贺笑春郭献军李刚
Owner YANTAI UNIV
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