Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A three-dimensional integrated structure of nanocapacitor and its manufacturing method

A nano-capacitor, three-dimensional integration technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as single and increase storage capacity, reduce process steps, increase capacitance density, reduce interconnect resistance and The effect of energy loss

Active Publication Date: 2022-04-29
FUDAN UNIV +1
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high aspect ratio structures currently used in nanocapacitors are relatively single, which cannot increase the storage capacity to a greater extent, thus limiting nanocapacitors as effective energy buffer components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A three-dimensional integrated structure of nanocapacitor and its manufacturing method
  • A three-dimensional integrated structure of nanocapacitor and its manufacturing method
  • A three-dimensional integrated structure of nanocapacitor and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025]In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relations...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
depthaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a nano capacitor three-dimensional integrated structure and a manufacturing method thereof. The nanocapacitor three-dimensional integrated structure includes a first nanocapacitance structure and a second nanocapacitance structure formed on the front and back of the aluminum foil, and the first top metal electrode layer of the first nanocapacitance structure passes through the first trench structure and the second trench structure. , the aluminum via structure, the fourth groove structure, the fifth groove structure are electrically connected to the second top metal electrode layer of the second nanocapacitance structure; the first bottom metal electrode layer of the first nanocapacitance structure passes through the third groove The structure, the aluminum foil, and the sixth trench structure are in electrical communication with the second bottom metal electrode layer of the second nanocapacitor structure. The invention can significantly increase the capacitance density and shorten the length of the interconnection line, thereby helping to reduce the interconnection resistance and energy loss. In addition, it can reduce the process steps and process complexity, thereby effectively reducing the production cost.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing, and in particular relates to a three-dimensional integrated structure of nanocapacitors and a manufacturing method thereof. Background technique [0002] Currently, batteries are still the main energy supply components for portable electronic devices. Although battery technology is constantly evolving, there is still a trade-off between battery capacity and volume and weight. Accordingly, some alternative power supply components with large capacity, light weight, and small size have been researched and developed, such as micro fuel cells, plastic solar cells, and energy harvesting systems. In all the cases mentioned above, an energy buffer system is usually required to maintain a continuous and steady energy output. For example, fuel cell systems are generally believed to have slower start-up times and lower kinetic energy. Therefore, a hybrid system in which the fuel cell provi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/08H01L21/822
CPCH01L27/0805H01L21/8221
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products