Preparation method of mos device and mos device

Abstract

The present disclosure provides a method for preparing a MOS device and a MOS device. The MOS device includes a wide bandgap semiconductor substrate and an SOI substrate. The wide bandgap semiconductor substrate is made of silicon carbide, gallium nitride, gallium oxide, or diamond. Any one of the methods, the method includes: injecting boron or nitrogen atoms into the upper surface of the wide bandgap semiconductor substrate to form a surface doping layer; injecting active groups containing hydrogen ions into the surface doping layer; The surface of the insulating dielectric layer of the chip is plasma activated to form hydroxyl active plasma units in the insulating dielectric layer; through the hydrogen ions contained in the surface doping layer and the hydroxyl active plasma units included in the insulating dielectric layer, the wide bandgap is bonded On the semiconductor substrate and SOI substrate, the silicon dielectric layer is subjected to low-temperature oxidation treatment to form a gate dielectric layer; on the lower surface of the wide-bandgap semiconductor substrate, multi-layer metals of nickel, titanium, and aluminum are sequentially deposited to form a back electrode contact; A metal film layer is deposited on the front side of the gate dielectric layer to form a front electrode contact.

Description

technical field [0001] The present application relates to the field of crystal technology, in particular to a method for preparing a MOS device and the MOS device. Background technique [0002] Silicon carbide (SiC) is a wide bandgap semiconductor with excellent performance. It not only has a wide band gap (3 times that of silicon), high thermal conductivity (3.3 times that of silicon), and high breakdown field strength (10 times that of silicon). , Saturated electron drift rate is high (2.5 times that of silicon), and it also has excellent physical and chemical stability, strong radiation resistance and mechanical strength, etc. It is the material of choice for high-power power electronic devices. Therefore, electronic devices based on wide-bandgap SiC materials can be used in power electronics fields such as high temperature, high power, high frequency, and high radiation, and can give full play to the important advantages and outstanding features of SiC-based devices in t...

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Problems solved by technology

At the same time, when the Si element is incompletely oxidized, it is easy to form the secondary oxide and interface state of Si at the interface, which seriously affects the SiO 2 / SiC interface quality, resulting in SiC and SiO 2 The increase of the interface state density has formed serious interface scattering for the carrier transport of SiC-based MOS devices

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