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Wide-range tunnel magnetoresistance sensor and Wheatstone half-bridge

A technology of tunnel magnetoresistance and wide range, applied in the field of Wheatstone bridge, can solve the problem of small working range of TMR magnetoresistance sensor

Pending Publication Date: 2020-12-15
CHINA ELECTRIC POWER RES INST +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a wide-range tunnel magnetoresistance sensor, which is used to solve the problem of the small working range of the TMR magnetoresistance sensor

Method used

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  • Wide-range tunnel magnetoresistance sensor and Wheatstone half-bridge
  • Wide-range tunnel magnetoresistance sensor and Wheatstone half-bridge
  • Wide-range tunnel magnetoresistance sensor and Wheatstone half-bridge

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Embodiment Construction

[0030] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar promotions without violating the connotation of the present application. Therefore, the present application is not limited by the specific implementation disclosed below.

[0031] The application provides a wide-range tunneling magnetoresistance sensor, which can also be called a three-port tunneling magnetoresistance sensor (MTJ), and its structure is as follows figure 1 As shown, it consists of 1 antiferromagnetic layer, 2 ferromagnetic pinning layers, 3 barrier insulating layers, 4 ferromagnetic free layers and 5 nonmagnetic metal layers. The antiferromagnetic layer is composed of hard magnetic antiferromagnetic materials , forming a bias effect with the ferromagnetic pinned layer; t...

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Abstract

The invention discloses a wide-range tunnel magnetoresistance sensor, which is formed by sequentially superposing an antiferromagnetic layer, a ferromagnetic pinning layer, a barrier insulating layer,a ferromagnetic free layer and a non-magnetic metal layer, and utilizes current to generate spin current in a functional material (W, Ta, Pt, CuBi and the like) electrode layer with a high spin orbittorque effect. The spin current is injected into a free layer in the magnetic tunnel junction to generate a bias magnetic field, so that the working range of the TMR magnetoresistive sensor is changed, and the magnitude and direction of the bias magnetic field can be conveniently and accurately controlled through the magnitude and direction of the impressed current. Therefore, the working range of the TMR magnetoresistive sensor can be adjusted in real time according to actual requirements, and the problem that the working range of the TMR magnetoresistive sensor is small is solved.

Description

technical field [0001] The application relates to the field of sensor design, in particular to a wide-range tunnel magnetoresistance sensor and a Wheatstone bridge designed according to the wide-range tunnel magnetoresistance sensor. Background technique [0002] When magnetic materials are subjected to external heat, light, force and rays, their magnetic properties will be changed accordingly. At present, people use these characteristics of magnetic materials to develop various sensors with high sensitivity, high temperature stability, high response speed, high anti-interference and low power consumption. At present, magnetic sensors have been widely used in smart grid, smart home appliances, automotive electronics industry, automated manufacturing industry, aerospace and national defense security and other fields, for current sensing, position and direction sensing and positioning, material composition detection and analysis , various environmental monitoring, etc. [00...

Claims

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Application Information

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IPC IPC(8): G01D5/16G01R33/06G01R33/09G01R33/10
CPCG01D5/16G01R33/063G01R33/098G01R33/093G01R33/10
Inventor 李求洋张蓬鹤张卫欣熊素琴陈思禹刘卿李祯祥
Owner CHINA ELECTRIC POWER RES INST
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