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LTPS TFT array substrate and display device

A technology of array substrates and metal blocks, applied in optics, instruments, electrical components, etc., can solve the problem of high leakage current of thin film transistors, achieve the effects of reducing leakage current, large on-state current, and ensuring working performance

Pending Publication Date: 2020-12-11
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Embodiments of the present application provide an LTPS TFT array substrate and a display device, which can solve the problem of high leakage current of thin film transistors

Method used

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  • LTPS TFT array substrate and display device
  • LTPS TFT array substrate and display device
  • LTPS TFT array substrate and display device

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0028] Hereinafter, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more. "And / or" onl...

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Abstract

The embodiment of the invention provides an LTPS TFT array substrate and a display device, relates to the technical field of display, and can solve the problem of relatively high leakage current of athin film transistor. The LTPS TFT array substrate comprises a substrate, a metal block and at least one thin film transistor; the metal block is arranged on the substrate, and the metal block is provided with a first surface far away from one side of the substrate; the at least one thin film transistor comprises a polycrystalline silicon layer; the polycrystalline silicon layer comprises a sourceregion, a drain region and a channel region located between the source region and the drain region; the part, in contact with the first surface, of the polycrystalline silicon layer has a first grainsize, and the rest part of the polycrystalline silicon layer has a second grain size; the part, in contact with the first surface, of the polycrystalline silicon layer is located in at least one of the source region and the drain region; the first grain size is smaller than the second grain size.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an LTPS TFT array substrate and a display device. Background technique [0002] Low temperature polysilicon (Low Temperature Poly-Silicon, referred to as LTPS) has higher mobility and faster response time, so low temperature polysilicon is usually used to prepare the active layer of the thin film transistor, so that the display device including the thin film transistor can be made The size is smaller and the pixel density is higher, so it is widely used in display devices with high resolution and high PPI (Pixels Per Inch, pixel density). [0003] However, due to the high mobility of the low-temperature polysilicon, the leakage current of the thin film transistor is large, which in turn leads to defects such as bright spots in the display device. Contents of the invention [0004] Embodiments of the present application provide an LTPS TFT array substrate and a displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L27/32G02F1/1333
CPCH01L27/1214H01L27/1222G02F1/1333H10K59/00
Inventor 叶腾姚磊
Owner BOE TECH GRP CO LTD
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