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E-fuse programming and reading circuit

A technology for reading circuits and electrical connections, which is applied in the direction of logic circuit connection/interface layout, logic circuit coupling/interface using field effect transistors, etc., which can solve the problems of low reliability of programming circuits and inability to effectively control the programming current, etc. , to achieve the effect of reducing static power consumption

Pending Publication Date: 2020-11-27
北京炎黄国芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention proposes an E-fuse programming and reading circuit, which solves the problem of low reliability of the programming circuit and the inability to effectively control the programming current in the prior art

Method used

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  • E-fuse programming and reading circuit

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Embodiment Construction

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. For The descriptions of these embodiments are used to help the understanding of the present invention, but are not intended to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0022] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, ...

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Abstract

The invention relates to the technical field of integrated circuit design, and discloses an E-fuse programming and reading circuit which comprises a NOR gate, a first switch control tube, a second switch control tube, a current mirror image tube and a latch, two input ends of the NOR gate are electrically connected with a first control signal end and a second control signal end respectively; the second switch control tube is electrically connected with a read-write control signal end; and the current mirror image tube is electrically connected with the current control end and is used for controlling the magnitude of the current flowing through the E-fuse. By means of the current type programming mode, programming PAD of the E-fuse is not added, the E-fuse is directly programmed through anon-chip circuit, the layout area is reduced, and programming reliability is improved. Through programming control and reading enable control, the LATCH is adopted to latch the information stored in the E-fuse, so that the static power consumption is reduced. And a current mirror image tube is adopted to adjust the magnitude of image current, so that data reading errors caused by process deviationand inconsistency of E-fuse resistors after programming are prevented.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to an E-fuse programming and reading circuit. Background technique [0002] With the development of integrated circuits, the scale of circuits is getting larger and larger, and the integration of chips is getting higher and higher. The complexity of the circuit has increased, and the demand for configurability and repairability has further increased. Because the E-fuse (electric fuse) structure circuit requires simple, low process requirements and high reliability, EFUSE is widely used in circuit configuration, repair, parameter recording, etc., and the initial state of the circuit unit is not When it is perfect, the use of EFUSE can provide a replacement for the sub-circuit for testing or design, and at the same time provide the setting of process trimming parameters for the chip when the process deviation is large. [0003] In the traditional E-fuse programming...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185
CPCH03K19/0185
Inventor 郭虎王照新李建伟蔡彩银
Owner 北京炎黄国芯科技有限公司
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