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Preparation method of GO-WO3/TiO2 microsphere film electrode

A thin-film electrode and microsphere technology, which is applied in the field of preparation of GO-WO3/TiO2 microsphere thin-film electrodes, can solve the problems of strict reaction conditions, low film-making efficiency, small comparative area, etc., and achieves simple and good experimental reagents. Experimental application value, the effect of uniform thickness

Pending Publication Date: 2020-11-20
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the magnetron sputtering technology has problems such as strict requirements on reaction conditions, high equipment cost, and low film production efficiency, and has not yet been applied on a large scale; while the thin film obtained by the electrodeposition method is very dense, resulting in a small comparison area, which is not easy to use. Good for TiO 2 Contact with the degraded substrate; the sol impregnation pulling method has higher requirements for the pulling angle and the concentration of the sol; the operation technology has higher requirements; the coating method is to prepare the raw material into a slurry and coat it on the substrate , and then conduct heat treatment to obtain a film that is firmly bonded to the substrate. It can also be used in the preparation of composite films. The equipment used in this method is simple, easy to operate, and the crystal form of the film is controllable. It is economical and practical, and has a wide range of applications.
At present, some surface acid etching treatment is carried out on the conductive glass to enhance its roughness, thereby improving the bonding force between the film and the conductive substrate, and using the coating method to prepare graphene-WO 3 / TiO 2 Composite thin film electrodes and their application in photoelectrocatalysis are rarely reported

Method used

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  • Preparation method of GO-WO3/TiO2 microsphere film electrode
  • Preparation method of GO-WO3/TiO2 microsphere film electrode
  • Preparation method of GO-WO3/TiO2 microsphere film electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] (1) Cleaning of the ITO conductive glass: Wash the ITO conductive glass with detergent, acetone, anhydrous ethanol and deionized water in sequence for 15 minutes, and then dry it naturally.

[0039] (2) The clean ITO conductive glass is placed in a 0.02 mol / L hydrochloric acid solution for etching for 30 minutes, then dried and used for later use.

[0040] (3) Accurately weigh 0.08g of graphene-WO 3 / TiO 2 The powder is placed in a mortar, and 3 to 4 drops of NMP are added to fully grind it uniformly, and then 0.02 g of polyvinylidene fluoride (PVDF) is added to grind it uniformly to form a uniformly dispersed slurry.

[0041] (4) Preparation of graphene-WO by blade coating method 3 / TiO 2 For thin film electrodes, the coated electrodes were first dried naturally at room temperature; then, they were placed in a muffle furnace and heated to 200 °C at 1 °C / min, and then kept for 2 h to obtain spherical graphene-WO. 3 / TiO 2 Thin film electrodes.

[0042] Preparation...

Embodiment 2

[0045] (1) Same as step (1) in Example 1.

[0046] (2) The clean ITO conductive glass is placed in a 0.01 mol / L hydrochloric acid solution for etching for 10 minutes, then dried and used for later use.

[0047] (3) Same as step (3) in Example 1.

[0048] (4) Same as step (4) in Example 1.

[0049] The prepared graphene-WO 3 / TiO 2 Microsphere thin film electrode, the film surface is made of graphene-WO 3 / TiO 2 The microspheres are piled up. There are many holes on the surface of the film, but it still maintains a complete spherical shape. There is no crack or crack on the surface of the film. The thickness of the film electrode is relatively uniform, about 15-25 μm.

Embodiment 3

[0051] (1) Same as step (1) in Example 1.

[0052] (2) The clean ITO conductive glass is placed in a 0.01 mol / L acetic acid solution for etching for 10 minutes, then dried and used for later use.

[0053] (3) Same as step (3) in Example 1.

[0054] (4) Same as step (4) in Example 1.

[0055] The prepared graphene-WO 3 / TiO 2 Microsphere thin film electrode, the film surface is made of graphene-WO 3 / TiO 2 The microspheres are piled up. There are many holes on the surface of the film, but it still maintains a complete spherical shape. There is no crack or crack on the surface of the film. The thickness of the film electrode is relatively uniform, about 15-25 μm.

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Abstract

The invention relates to a preparation method of a GO-WO3 / TiO2 composite membrane electrode. A common acid solution is used for etching the surface of the ITO conductive glass to a certain degree, sothat the binding force between the film and the ITO substrate is enhanced, and the performance of the material is improved, the graphene-WO3 / TiO2 microsphere film electrode is prepared by using a blade coating method, compared with the prior art, the method has the advantages that expensive equipment is not needed, only simple tools are needed, reagents used in the coating process are common, redundant solvents can be volatilized after later heat treatment, and unnecessary influences on the performance of the thin film electrode due to the residual reagents are avoided, the graphene-WO3 / TiO2 microsphere film electrode prepared by the method disclosed by the invention can be applied to a photoelectrocatalysis process, a solar cell, hydrogen production by photolysis of water, a supercapacitor and the like due to the fact that the material has relatively good photochemical properties and electrochemical properties.

Description

[0001] (1) Technical field [0002] The present invention relates to a GO-WO 3 / TiO 2 Preparation method of microsphere thin film electrode. [0003] (2) Background technology [0004] Semiconductor photocatalysis technology can directly convert solar energy into chemical energy at room temperature, which is a new type of green catalytic technology. Due to its safety, non-toxicity and low environmental requirements, it has received extensive attention in environmental governance and energy development. Semiconductor photocatalysis is a cross-catalytic technology that combines electrocatalytic technology with photocatalytic technology. The applied micro-voltage can effectively promote the separation of photo-generated electron and hole pairs and can directly oxidize pollutants. Therefore, in the photocatalytic process, the two can produce photoelectric synergy to improve the catalytic efficiency. Therefore, photoelectric catalysis has been widely used, such as solar cells, ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/00C03C15/00C25B11/06C25B1/04B01J23/30B01J35/00
CPCC03C17/009C03C15/00C25B1/04B01J23/30B01J35/39B01J35/33Y02E60/36
Inventor 李国华李媛胡海峰
Owner ZHEJIANG UNIV OF TECH
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