Power semiconductor device and manufacturing method thereof

Abstract

The invention provides a power semiconductor device and a manufacturing method thereof, and solves the problem that a standard GCT chip is easy to fail at a chip mesa terminal in an overvoltage blocking state, and further causes that the device fails and is in an open circuit state. The device comprises a functional region and a voltage breakdown region, the voltage breakdown region is close to the central position of the power semiconductor device, is surrounded by the functional region, and comprises a second conductive type short circuit structure and a convex second conductive type base region which are stacked in sequence, and the second conductive type short circuit structure penetrates through a first conductive type transparent emitting anode and a second conductive type buffer layer of the functional region; the convex second conductive type base region penetrates through a first conductive type first base region, a first conductive type second base region and a second conductive type region, and a protruding part is formed in the extending direction of the second conductive type base region towards the first conductive type base region.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power semiconductor device and a manufacturing method thereof. Background technique [0002] GCT (Gate Commutated Thyristors, Gate Commutated Thyristors), as a fully-controlled power semiconductor device, has great potential for future applications in flexible DC grids due to its large blocking capability, low on-state loss, and large power capacity. There are three PN junctions in the existing GCT device, and the junctions from the anode to the cathode are J 1 junction (anode transparent junction), J 2 junction (blocking voltage main junction) and J 3 junction (gate-cathode junction). GCT is divided into four working states: trigger (open), on-state, off and blocking. When the GCT chip is in the overvoltage blocking state, it is necessary to apply a reverse bias voltage within -20V (or short circuit) to the gate-cathode of the device to avoid a significant drop in t...

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Problems solved by technology

[0003] In view of this, the embodiment of the present invention provides a power semiconductor device and its manufacturing method, which solves the problem that the current standard GCT chip structure is prone to failure at the end of the chip mesa in the overvoltage blocking state, causing the device to fail in an open state The problem

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