Large-scale preparation and patterning method of two-dimensional material semiconductor film and two-dimensional material semiconductor film
A technology for large-scale preparation of two-dimensional materials, applied in the field of two-dimensional semiconductor thin film preparation, can solve the problems of inability to apply roll-to-roll technology, low resolution and precision, and uneven stacking of nanosheets
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Embodiment 1
[0045] The invention discloses a large-scale preparation and patterning method of a two-dimensional material semiconductor thin film, comprising the following steps:
[0046] Step 1, pre-treat the substrate, the substrate can be rigid SiO 2 / Si or glass sheet, or flexible PET or PI, the specific operation is to ultrasonicate the substrate in acetone and isopropanol for 5 minutes, and then treat the substrate with oxygen plasma (120w, 5min).
[0047] Step 2, use a negative photolithography target pattern on the pretreated substrate: the specific operation is to spin coat the photoresist on the substrate (4000rpm, 30s); treat the substrate on a heating plate at 150°C for 1min; place the substrate on Under the mask plate of the target pattern of the lithography machine, expose it to a UV lamp for 10s; treat the substrate on a heating plate at 100°C for 1min; develop the substrate in the developer for 12s, clean the developer on the substrate with distilled water and dry it with a...
Embodiment 2
[0051] The solution self-assembly preparation and patterning method disclosed in the present invention can also be extended to other charged two-dimensional semiconductor materials, such as In 2 Se 3 two-dimensional semiconductor.
[0052] Step 1, pre-treat the substrate, the substrate can be rigid SiO 2 / Si or glass sheet, or flexible PET or PI, the specific operation is to ultrasonicate the substrate in acetone and isopropanol for 5 minutes, and then treat the substrate with oxygen plasma (120w, 5min).
[0053] Step 2, use a negative photolithography target pattern on the pretreated substrate: the specific operation is to spin coat the photoresist on the substrate (4000rpm, 30s); treat the substrate on a heating plate at 150°C for 1min; place the substrate on Under the mask plate of the target pattern of the lithography machine, expose it to a UV lamp for 10s; treat the substrate on a heating plate at 100°C for 1min; develop the substrate in the developer for 12s, clean th...
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