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Method and device for preparing indium antimonide single crystal

An indium antimonide single crystal and indium antimonide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve problems such as hidden dangers of hydrogen leakage, high equipment costs, and extremely high technical experience requirements for crystal pulling workers.

Active Publication Date: 2020-10-23
安徽光智科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has high equipment costs, high crystal stress, high dislocation density, and complicated crystal growth process, which is not conducive to growing large-sized, low-dislocation single crystals.
For example, the growth method of indium antimonide single crystal disclosed in the patent (CN 109280978A) needs to be protected by flowing high-purity hydrogen during the crystal growth process, and there is a hidden danger of hydrogen leakage. It is necessary to design an explosion-proof single crystal furnace, and the equipment cost is high; Seeding, necking, shouldering, equal diameter, finishing and other processes grow single crystals, which are easy to form twins; in addition, this method has strict requirements on shoulder angles, and requires extremely high process experience for crystal pullers

Method used

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  • Method and device for preparing indium antimonide single crystal
  • Method and device for preparing indium antimonide single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] This example is an embodiment of the preparation device for indium antimonide single crystal of the present invention. For the specific structure of the preparation device, see figure 1 and figure 2 .

[0049] The preparation device comprises an airtight container, a heater 4 and a supporting device 5, wherein the airtight container includes a first crucible 1, a second crucible 2 and a sealing cap 3, the upper end of the second crucible 2 is open and placed in the first crucible 1, sealed The cap 3 is welded to the upper end of the first crucible 1, the first crucible 1 is inside the heater 4, and the supporting device 5 is used to support and fix the first crucible 1 at the lower part of the first crucible 1; the second crucible 2 includes a The main body 21, the seed crystal cavity 23 and the conical shoulder 22 connecting the main body 21 and the seed crystal cavity 23, wherein the height of the main body 21 is 230 mm, the height of the conical shoulder 22 is 50 ...

Embodiment approach

[0052] This example is an embodiment of the method for preparing an indium antimonide single crystal of the present invention. The preparation method uses the device in Example 1 to prepare an indium antimonide single crystal, and it includes the following steps:

[0053] (1) Feeding: put the second crucible 2 in the first crucible 1, and then place the indium antimonide seed crystal 6 in the direction with a dislocation density of 0 in the seed crystal chamber 23 of the second crucible. The crystal diameter is 10 mm, and the length is 50 mm. Then, 8 kg of indium antimonide polycrystal 7 and 20 g of boron trioxide 8 are filled in the second crucible 2. The positional relationship of each raw material after charging is as follows: figure 2 As shown (part of the indium antimonide polycrystalline 7 has a drilled hole inside, and diboron trioxide 8 is placed in the drilled hole), immediately afterwards the air inside the first crucible 1 is evacuated, and the top is sealed with a...

Embodiment 3

[0057] This example is an embodiment of the method for preparing an indium antimonide single crystal of the present invention. The preparation method uses the device in Example 1 to prepare an indium antimonide single crystal, and it includes the following steps:

[0058] (1) Feeding: put the second crucible 2 in the first crucible 1, and then place the indium antimonide seed crystal 6 in the direction with a dislocation density of 0 in the seed crystal chamber 23 of the second crucible. The crystal diameter is 10mm, and the length is 50mm. Then, in the second crucible 2, 10kg of indium antimonide polycrystal 7 and 50g of boron trioxide 8 are filled. The positional relationship of each raw material after charging is as follows: figure 2 As shown (part of the indium antimonide polycrystalline 7 has a drill hole inside, and diboron trioxide 8 is placed in the drill hole), immediately after that, the air inside the first crucible 1 is evacuated, and the top is sealed with a seal...

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Abstract

The invention provides a preparation method and device of an indium antimonide single crystal, and relates to the field of crystal preparation. The preparation method comprises the following steps: adding indium antimonide seed crystals, indium antimonide polycrystals and diboron trioxide into a closed container; carrying out crystal growth by adopting a vertical Bridgman method (VB method); in this way, the crystals begin to grow from the bottom of the melt and are not interfered by dross, automation of crystal growth can be achieved by controlling a heating program, and compared with a Cz method, the method is low in requirement for technological experience of crystal pulling workers, high in finished product success rate, low in dislocation density and stable and controllable in quality. By arranging a heating area with independent temperature control above the closed container, the heat preservation effect can be achieved, materials can reach the set temperature more accurately, and the overall mass distribution of obtained crystals is more uniform.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a method for preparing an indium antimonide single crystal and a device thereof. Background technique [0002] Indium antimonide (InSb) is the material with the narrowest bandgap and the largest mobility among III-V compound semiconductors. It has high quantum efficiency in the 3μm-5μm band and is widely used in infrared detectors and Hall devices. . In order to adapt to the trend of large-scale development of InSb infrared focal plane array devices, large-size, low-dislocation InSb single crystals have attracted more and more attention. [0003] At present, the main growth method of indium antimonide single crystal is the Czochralski (Czochralski) method, also known as the Cz method. The growth process of the Cz method is to heat and melt the raw materials in a crucible under the protection of high-purity gas, insert the seed crystal into the melt through a lifting rod, and ...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/40
CPCC30B11/003C30B11/006C30B29/40
Inventor 黄幸慰朱刘狄聚青易明辉刘运连何志达尹士平熊威
Owner 安徽光智科技有限公司
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