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Giant magnetoresistance magnetic monopole switch sensor

A switching sensor and giant magnetoresistance technology, which is applied to magnetic field-controlled resistors, uses electromagnetic/magnetic devices to transmit sensing components, instruments, etc., can solve the problem that the switching field cannot meet the application requirements of larger switching fields, and achieves the design And the effect of a wide range of applications, easy to design

Pending Publication Date: 2020-10-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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Problems solved by technology

[0007] In view of the above existing problems or deficiencies, in order to solve the problem that the switch field of the existing spin valve structure magnetic unipolar switch sensor cannot meet the application requirements of a larger switch field, the present invention provides a giant magnetoresistive magnetic unipolar switch sensor based on The double-pinned spin valve structure, taking advantage of the advantage that the exchange bias field can be modulated in a large range, replaces the coupling field that can only be changed in a small range, making the magnetic unipolar switch based on giant magnetoresistance easier to design and meet the requirements of larger Switchyard Application Requirements

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Embodiment Construction

[0021] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0022] A giant magnetoresistance magnetic unipolar switch sensor, its preparation method comprises the following steps:

[0023] Step 1: Select Si / SiO 2 As the substrate material, the standard lift-off photolithography process is used to expose the pattern of the giant magnetoresistive magnetic unipolar switch sensor. The sensor consists of four identical sensing units to form a Wheatstone bridge structure. The long axis of each elongated double-pinned structure magnetoresistive sensing unit thin film is 84 μm, and the short axis is 10 μm.

[0024] Step 2: Place the substrate exposed in step 1 in a magnetron sputtering device, and deposit Ta(5nm) / IrMn(15nm) / NiFe(12nm) / Cu(5nm) / CoFe on the substrate in sequence using a thin film deposition process (6nm) / IrMn(15nm) / Ta(5nm) double-pinned structure magnetoresistive sensing unit fi...

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Abstract

The invention belongs to the technical field of magnetic materials and components, and relates to a magnetic sensing technology, in particular to a giant magnetoresistance magnetic monopole switch sensor and a method for realizing the magnetic monopole switch sensor by utilizing a double-pinning structure. According to the invention, a double-pinning spin valve structure in the field of storage isused as a sensing unit; the advantage that an exchange bias field of double exchange bias can be modulated in a large range is utilized to replace a coupling field which can only be changed in a small range and is adopted in the prior art, so that a magnetic monopole switch realized based on the giant magnetoresistor is easier to design and meets the application requirements of a larger switch field.

Description

technical field [0001] The invention belongs to the technical field of magnetic materials and components, and relates to magnetic sensing technology, in particular to a giant magnetoresistance magnetic unipolar switch sensor and a method for realizing the magnetic unipolar switch sensor by using a double pinning structure. Background technique [0002] Giant magnetoresistance is an effect in which the orientation of the magnetic layer is modulated by an external magnetic field in a magnetic multilayer film, and the resistance changes with the external magnetic field. Generally, the whole system exhibits low resistance when the magnetic moments of the magnetic layers are parallel, and the whole system exhibits high resistance when the magnetic moments of the magnetic layers are antiparallel. [0003] Among them, the spin valve structure is a common structure that can obtain the giant magnetoresistance effect, and its basic structure is ferromagnetic layer 1 (free layer) / isola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08H01L43/10G01D5/14G01R33/09H10N50/80H10N50/10
CPCG01R33/093G01D5/14H10N50/80H10N50/85H10N50/10
Inventor 唐晓莉李光耀姜杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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