Voltage-enhanced readout amplification circuit

An amplifying circuit and voltage enhancement technology, applied in the circuit field, can solve the problems of small judgment window, low ratio of MRAM unit resistance value, low judgment margin, etc., and achieve the effect of improving accuracy

Active Publication Date: 2020-09-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Limited by the process, the resistance value ratio of the MRAM cell in the high-resistance and low-resistance states is relatively low, resulting in a small judgment window for the readout circuit to distinguish the two states, and a low judgment margin.

Method used

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  • Voltage-enhanced readout amplification circuit

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Embodiment Construction

[0027] It can be seen from the background art that how to improve the judgment margin of the sense amplifier circuit has become an urgent problem to be solved.

[0028] In MRAM, by changing the resistance state of the MRAM memory unit circuit, it can be switched between the high resistance state RH and the low resistance state RL, thereby using this property to store data information, for example, RH corresponds to the data bit "1 ", RL corresponds to data bit "0", or vice versa.

[0029] A storage unit circuit may be composed of a data storage circuit and an access control circuit, wherein the data storage circuit may have two resistance states of RL and RH, and the access control circuit may include an NMOS word line selection transistor. This circuit structure can be called 1R1T structure.

[0030] as attached figure 1 As shown, in a kind of MRAM, an MRAM memory can include two kinds of storage unit circuits, one is a data unit circuit 14, and its resistance state can be ...

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Abstract

The embodiment of the invention discloses a voltage-enhanced readout amplification circuit, and the circuit comprises: a storage and reading circuit which is suitable for outputting a data voltage anda reference voltage, wherein the data voltage and the reference voltage are generated based on the reading of data stored in the storage and reading circuit; a voltage division amplifying circuit, wherein the input end of the voltage division amplifying circuit is coupled with the storage and reading circuit, and the voltage division amplifying circuit is suitable for amplifying the data voltageand the reference voltage respectively so as to output a data amplifying voltage corresponding to the data voltage and a reference amplifying voltage corresponding to the reference voltage; and a comparison amplification circuit which is coupled with the voltage division amplifying circuit, wherein the comparison amplification circuit is suitable for comparing the data amplification voltage with the reference amplification voltage and outputting a comparison signal. According to the technical scheme in the embodiment of the invention, the judgment allowance of the readout amplifying circuit can be improved.

Description

technical field [0001] The invention relates to the field of circuits, in particular to a voltage-enhanced sense amplifier circuit. Background technique [0002] Magnetic Random Access Memory (MRAM) is an emerging non-volatile storage technology. It has high-speed read and write speed and high integration, and can be written repeatedly. [0003] Limited by the process, the resistance value ratio of the MRAM cell in the high-resistance and low-resistance states is relatively low, resulting in a small judgment window for the readout circuit to distinguish the two states, and a low judgment margin. [0004] How to improve the judgment margin of the sense amplifier circuit has become an urgent problem to be solved. Contents of the invention [0005] The problem solved by the invention is to improve the judgment margin of the memory readout circuit. [0006] In order to solve the above problems, the present invention provides a voltage-enhanced sense amplifier circuit, inclu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06G11C16/30
CPCG11C7/06G11C16/30
Inventor 王韬
Owner SEMICON MFG INT (SHANGHAI) CORP
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