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Composite material and preparation method thereof

A composite material and compound technology, applied in the field of materials, can solve problems such as poor luminous effect

Inactive Publication Date: 2020-09-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Even though silicon quantum dots form a transition channel under quantum space constraints, their luminous effect is still relatively poor

Method used

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  • Composite material and preparation method thereof
  • Composite material and preparation method thereof
  • Composite material and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0035] like figure 1 Shown, in some embodiments, the preparation method of described composite material, comprises the steps:

[0036] S01 provides silicon quantum dots;

[0037] S02 Under alkaline conditions, the silicon quantum dots are mixed with a reducing agent and heated to obtain silicon quantum dots with hydrogen atoms bound to the surface;

[0038] S03 Mixing the first compound of the silicon quantum dots with hydrogen atoms bound to the surface for an addition reaction to obtain the composite material, the first compound is an organic compound containing an unsaturated bond.

[0039] In some embodiments, in the step S01, the silicon quantum dots are silicon quantum dots prepared by existing methods, for example, in some specific embodiments, the silicon quantum dots are synthesized by a hydrothermal method.

[0040] In some embodiments, in the step S02, the silicon quantum dots are mixed with a reducing agent and heated at a pH of 10-12 to obtain silicon quantum do...

Embodiment 1

[0082] Silicon quantum dots were synthesized by the hydrothermal method. A certain amount of silicon quantum dots was put into an agate mortar and ground for several hours to obtain silicon powder with a very small particle size. Then 200 mg was weighed and added to a hydrothermal reaction kettle. Add 40 mL of deionized water, adjust the pH to 10 with NaOH, add 0.4 g of NaBH 4 ,seal. Put the reaction kettle into a constant temperature oven, raise the temperature to 200°C, and react for 5 hours. After the reaction was completed, it was naturally cooled to room temperature to obtain a colorless and clear solution. Then filter to remove solid impurities, collect the filtrate, add it to a 250 mL round bottom flask, and use a vacuum rotary evaporator to remove the water, and the obtained solid powder is hydrogen atom passivated silicon quantum dots;

[0083] Take 80 mg hydrogen atom passivated silicon quantum dot powder and add it to a 20 mL round bottom flask, then add 3 mL of a...

Embodiment 2

[0085] Silicon quantum dots were synthesized by the hydrothermal method. A certain amount of silicon quantum dots was put into an agate mortar and ground for several hours to obtain silicon powder with a very small particle size. Then 200 mg was weighed and added to a hydrothermal reaction kettle. Add 40 mL of deionized water, adjust the pH to 11 with NaOH, add 0.6 g of NaBH 4 ,seal. Put the reaction kettle into a constant temperature oven, raise the temperature to 210°C, and react for 7 hours. After the reaction was completed, it was naturally cooled to room temperature to obtain a colorless and clear solution. Then filter to remove solid impurities, collect the filtrate, add it to a 250 mL round bottom flask, and use a vacuum rotary evaporator to remove the water, and the obtained solid powder is hydrogen atom passivated silicon quantum dots;

[0086] Take 100 mg of silicon quantum dots passivated by hydrogen atoms and disperse them in 10 ml of water, add 1 mL of 5% I2 alc...

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Abstract

The invention discloses a composite material and a preparation method thereof. The composite material comprises silicon quantum dots and one of an alkane group, an alkenyl-substituted alkyl group, a phenyl-substituted alkyl group and an amino-substituted alkyl group, which are combined on the surfaces of the silicon quantum dots. After the surfaces of the silicon quantum dots are hydrogenated or halogenated, Si on the surfaces is bonded with H or halogen atoms to form bonds, surface defects of the silicon quantum dots are passivated, and oxidation is prevented. Furthermore, the passivation effect can be further enhanced by reacting the silicon quantum dots of which the surfaces are bonded with hydrogen and the silicon quantum dots of which the surfaces are bonded with halogen atoms with acompound.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a silicon quantum dot composite material and a preparation method thereof. Background technique [0002] As an important semiconductor material, silicon has become the foundation of today's semiconductor industry due to its mature processing technology, excellent electrical properties and abundant resource reserves. Silicon quantum dots have the characteristics of cheap and easy to obtain raw materials, simple preparation, and excellent properties, which allow them to play an important role in the fields of optoelectronics, photovoltaics, and biomarkers, and have good application prospects. As an important branch of nanomaterials, it has the properties of both semiconductor materials and nanomaterials. Its shape is approximately spherical, and its particle size is below 10nm. [0003] However, silicon quantum dots have an obvious shortcoming, that is, it is difficult to emit l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/59C09K11/06B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/06C09K11/59
Inventor 叶炜浩
Owner TCL CORPORATION
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