A kind of vertical structure LED chip and preparation method thereof

Abstract

The invention discloses a vertical structure LED chip and a preparation method thereof. The chip comprises a first n-GaN layer, a patterned reflection layer, a second reflection layer, a second n-GaN layer, a multi-quantum well layer, a p-GaN layer, and a p-GaN layer. a GaN layer and a second substrate; the patterned reflective layer is a convex structure arranged at intervals, and the patterned reflective layer is a distributed Bragg reflector. The manufacturing method includes: forming an intrinsic GaN layer and a first n-GaN layer on a first substrate; covering the first reflective layer; etching to form a patterned reflective layer; covering the second reflective layer; An n-GaN layer does not cover the surface of the patterned reflective layer; covers the second n-GaN layer, the multi-quantum well layer, and the p-GaN layer; bonds the p-GaN layer to the second substrate; peels off the first substrate . The intrinsic GaN layer exposing the first n-GaN layer. The invention has high light extraction efficiency, can effectively alleviate the current congestion effect when a large current is injected, and the current distribution is uniform.

Description

technical field [0001] The invention relates to a semiconductor photoelectric chip and a manufacturing method, in particular to a vertical structure LED chip and a preparation method thereof. Background technique [0002] A light-emitting diode (LED) is a semiconductor element that can emit light. The LED has the advantages of small size, low power consumption, and long service life. Nowadays, LEDs are gradually replacing traditional light sources, and the demand for high-brightness LEDs is becoming more and more urgent, because the p-type electrode and n-type electrode of the planar structure LED are on the same side, and the current flows laterally in the n-GaN layer and the p-GaN layer. Therefore, the current distribution is uneven, resulting in current congestion and high heat generation. The n-type electrode and the p-type electrode of the vertical structure LED are distributed up and down, so the problem of uneven current distribution of the traditional planar structu...

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Problems solved by technology

[0003] However, the inventors found that in the existing vertical structure LED, the patterned sapphire substrate, which is beneficial to increase the light extraction efficiency, is peeled off by laser in the later stage, which easily leads to low light extraction efficiency of the final LED chip

The n-type electrode and p-type electrode of the existing vertical structure LED are distributed up and down. When a large current is injected, the current crowding effect near the n-type electrode (especially the interdigitated electrode overlap area) is obvious, which also affects the light extraction efficiency.

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