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Target material secondary utilization method

A technology of target material and splicing method, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of easy mixing of impurities and affecting the purity of metals, and achieve high recycling rate, cost saving, and two Guaranteed performance for the first time

Inactive Publication Date: 2020-09-22
江西兴泰科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the smelting and casting process involves phase changes, which can easily introduce impurities that affect the purity of the final metal

Method used

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Experimental program
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Embodiment

[0029] see Figure 1 to Figure 5 As shown, the present invention provides a target secondary utilization method, comprising the following steps:

[0030] S1: Provide a target assembly, the target assembly includes a backplane 1 and a target to be recovered 2 connected to the backplane 1, wherein the target to be recovered 2 has a bombarded area 3, and the thickness of the bombarded area 3 is smaller than other areas ;

[0031] S2: Process the target assembly to separate the back plate 1 from the target 2 to be recovered;

[0032] S3: wire-cut the target material 2 to be recovered according to the bombarded area 3, and cut it into multiple target material blocks;

[0033] S4: Splicing a plurality of target blocks into a new target, wherein the new target has a continuous area with a thickness meeting the sputtering requirement;

[0034] S5: welding the new target to the back plate for secondary use.

[0035] Further, as image 3 As shown, the bombardment area of ​​common t...

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Abstract

The invention discloses a target material secondary utilization method. The target material secondary utilization method comprises the following steps that a target material assembly is provided, wherein the target material assembly comprises a back plate and a to-be-recovered target material connected with the back plate, the to-be-recovered target material is provided with a bombarded area, andthe thickness of the bombarded area is smaller than that of other areas; the target material assembly is machined to make the back plate be separated from the to-be-recovered target material; the to-be-recovered target material is linearly cut according to the bombarded area to be cut into multiple target material blocks; the multiple target material blocks are spliced into a new target material,and the new target material is provided with a continuous area with the thickness meeting the sputtering requirement; and the new target material is welded to the back plate for secondary utilization.According to the method, the utilization rate of the target material after vacuum sputtering can be further improved, moreover, the operation is simplified, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for secondary utilization of a target. Background technique [0002] Magnetron sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionize a large number of argon ions and electrons, and the electrons fly to the substrate, and the argon ions accelerate bombardment sputtering under the action of an electric field Sputtering a large number of target atoms, the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally achieve the purpose of coating the surface of the substrate. [0003] The target assembly is composed of a target meeting the sputtering performance and a back plate welded to the target. The back plate plays a supporting role in the target assembly and has the effect of conducting heat. Target materials are generally...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/3407C23C14/35
Inventor 李强
Owner 江西兴泰科技股份有限公司
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