Treatment methods for silicon nitride thin films

Abstract

Embodiments herein provide for radical based treatment of silicon nitride layers deposited using a flowable chemical vapor deposition (FCVD) process. Radical based treatment of the FCVD deposited silicon nitride layers desirably increases the number of stable Si-N bonds therein, removes undesirably hydrogen impurities therefrom, and desirably provides for further crosslinking, densification, and nitridation (nitrogen incorporation) in the resulting silicon nitride layer. In one embodiment, a method of forming a silicon nitride layer includes positioning a substrate on a substrate support disposed in the processing volume of a processing chamber and treating a silicon nitride layer deposited on the substrate. Treating the silicon nitride layer includes flowing one or more radical species ofa first gas comprising NH3, N2, H2, Ar, He, or combinations thereof and exposing a silicon nitride layer to the radical species.

Description

technical field [0001] Embodiments of the present disclosure relate generally to the field of semiconductor component manufacturing processes, and more specifically, to methods for radical-based treatment of silicon nitride layers that have been deposited on substrate surfaces in electronic component manufacturing processes. Background technique [0002] Silicon nitride is commonly used as a dielectric material in electronic component manufacturing processes, such as insulating layers between metal levels, barrier layers to prevent oxidation or other diffusion, hard masks, passivation layers, spacer materials such as those used in transistors, Anti-reflective coating materials, layers in non-volatile memory, and as gap-fill materials in trenches between component features (to reduce crosstalk between them). Often, after the silicon nitride layer is deposited, the silicon nitride layer is further processed to achieve the desired film stoichiometry, etch selectivity, and other...

AI Technical Summary

Problems solved by technology

However, conventional processing methods create the risk of damaging underlying features and materials on the substrate due to the ion bombardment of the method, or are otherwise unsuitable for processing silicon nitride materials disposed in high aspect ratio openings

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