Preparation method of silicon carbide nanowires in situ toughened ceramic precursor type high temperature adhesive

A technology of in-situ growth of silicon carbide nanowires, applied in chemical instruments and methods, nanotechnology, nanotechnology, etc., can solve the problems of high temperature resistant glue porosity, reduced compactness, and attenuation of bonding effect, and achieve bonding strength Improvement, brittleness improvement, and the effect of repairing the inner structure of the rubber

Active Publication Date: 2022-02-18
CIVIL AVIATION UNIV OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, aluminum fluoride catalysts are severely corrosive to silicon-containing and aluminum-containing oxides in the rubber matrix at high temperatures, which can easily cause pores in the high-temperature-resistant rubber, and the reduction in compactness will lead to attenuation of the bonding effect.

Method used

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  • Preparation method of silicon carbide nanowires in situ toughened ceramic precursor type high temperature adhesive
  • Preparation method of silicon carbide nanowires in situ toughened ceramic precursor type high temperature adhesive
  • Preparation method of silicon carbide nanowires in situ toughened ceramic precursor type high temperature adhesive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The silicon carbide nanowire in-situ growth toughened ceramic precursor type high-temperature adhesive provided in this example includes the following steps in order:

[0028] (1) Mix vinyl polycarbosilane, polymethyl siloxane, phenolic resin, ferrocene and isopropanol according to the mass ratio of 3.5:1.5:1:0.6:2.5, and then stir at 65°C 5h to prepare gum base liquid;

[0029] (2) Fully mix aluminum powder, nickel powder, silicon powder, boron carbide powder and borate glass powder according to the mass ratio of 1.5:1:0.35:0.2:0.1 to prepare a filler mixture;

[0030] (1) Mix the gum base liquid prepared in step (1) and the filler mixture prepared in step (2) in a ball mill tank at a liquid-to-solid mass ratio of 5:4, and ball mill for 2 hours at a speed of 200r / min to obtain a viscosity of about 2500cps Gray-black silicon carbide nanowires in situ growth toughened ceramic precursor type high temperature glue.

Embodiment 2

[0032] (1) Mix vinyl polycarbosilane, polymethyl siloxane, phenolic resin, ferrocene and isopropanol according to the mass ratio of 4:2:1.25:0.9:2, and then carry out at 65°C Stir for 6 hours to prepare a gum base solution.

[0033] (2) Fully mix aluminum powder, nickel powder, silicon powder, boron carbide powder and trace borate glass powder according to the mass ratio of 2:1.5:0.5:0.15:0.2 to prepare a filler mixture;

[0034] (3) Mix the gum base liquid prepared in step (1) and the filler mixture prepared in step (2) in a ball mill tank according to the liquid-solid mass ratio of 6:5, and ball mill for 3 hours at a speed of 200r / min to obtain a viscosity of about 2500cps Gray-black silicon carbide nanowires in situ growth toughened ceramic precursor type high temperature glue.

Embodiment 3

[0036] (1) Mix vinyl polycarbosilane, polymethyl siloxane, phenolic resin, ferrocene and isopropanol according to the mass ratio of 4.5:1.5:0.75:0.7:1.5, and then carry out at 65°C Stir for 6 hours to prepare a gum base solution.

[0037] (2) Fully mix aluminum powder, nickel powder, silicon powder, boron carbide and a small amount of borate glass powder according to the mass ratio of 2.5:1:0.6:0.3:0.1 to prepare a filler mixture;

[0038] (3) Mix the gum base liquid prepared in step (1) and the filler mixture prepared in step (2) in a ball mill tank according to the liquid-solid mass ratio of 7:5, and ball mill for 3 hours at a speed of 150r / min to obtain a viscosity of about 2500cps Gray-black silicon carbide nanowires in situ growth toughened ceramic precursor type high temperature glue.

[0039] In the silicon carbide nanowire in-situ growth toughened ceramic precursor type high-temperature glue prepared by the method of the present invention, the main bonding phase is a ...

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Abstract

A method for preparing silicon carbide nanowire in-situ growth toughened ceramic precursor high-temperature glue. It includes the use of vinyl polycarbosilane, polymethicone, phenolic resin, ferrocene and isopropanol to prepare gum base fluid, aluminum powder, nickel powder, silicon powder, boron carbide powder and borate glass powder As a filler mixture, the steps of preparing high-temperature glue by mixing the gum base liquid and the filler mixture. The effect of the present invention: the high-temperature adhesive can grow silicon carbide nanowires in situ at 1100°C to be strengthened and toughened, so that its bonding performance is greatly improved in the range of 1100-1500°C, especially after 1300°C, the high-temperature The bonding strength of the glue at room temperature is 59.2% higher than that of the blank sample without nanowire growth. After in-situ growth of silicon carbide nanowires, the high-temperature adhesive exhibits good toughness at room temperature and high temperature, and the fracture displacement curve of the bonded bonded parts has an obvious approximate yield stage, which fully shows that the high-temperature adhesive has Very high safety in use.

Description

technical field [0001] The invention belongs to the technical field of adhesive material preparation, and in particular relates to a method for preparing silicon carbide nanowire in-situ growth toughened ceramic precursor type high-temperature adhesive. Background technique [0002] Adhesives are widely used in people's production and life because of their high-efficiency connection, simple operation, and low cost. Among them, high-temperature adhesives can be directly applied to high-temperature environments (up to 1500°C) after low-temperature curing and connection, and the stress concentration on the connection interface is small. It is used for the connection, installation, fixation and repair of certain high-temperature components due to its characteristics of little damage to the substrate. These high-temperature components usually include components made of materials such as high-temperature-resistant ceramics, ceramic-matrix composite materials, and high-temperature ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09J183/16C09J183/04C09J161/06C09J11/04C09J11/06C04B37/00B82Y30/00B82Y40/00C01B32/963C04B35/83
CPCC09J183/16C09J11/04C09J11/06C04B37/003C04B35/83C01B32/963B82Y30/00B82Y40/00C08L2205/03C08L2201/08C08K2003/0812C08K2003/0862C08K2003/387C01P2004/01C01P2004/03C01P2004/61
Inventor 王明超张海军周青军罗星娜冯兆杰
Owner CIVIL AVIATION UNIV OF CHINA
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