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Electronic synaptic device modified by silver nanoparticles

A technology of silver nanoparticles and electronic synapses, which is applied in the direction of electrical components, etc., can solve the problems of low linearity of conductance regulation and easy loss of weight in the transformation process, and achieve uniform plasticity process of devices, simplify and predictable, and reduce weight loss. Effect

Inactive Publication Date: 2020-09-04
FUZHOU UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0004] However, electronic synaptic devices based on single-layer oxides have the disadvantages of low linearity of conductance regulation and easy loss of transition process weights.

Method used

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  • Electronic synaptic device modified by silver nanoparticles
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  • Electronic synaptic device modified by silver nanoparticles

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Effect test

preparation example Construction

[0032] The preparation method of the electronic synapse device comprises the following steps;

[0033] Step A1, making an oxide dielectric layer on the heavily doped silicon substrate by magnetron sputtering, ALD or evaporation and forming a good electrical contact with the heavily doped silicon substrate;

[0034] Step A2, using magnetron sputtering, CVD, PECVD, MOCVD or evaporation to prepare an Ag film with a required thickness or an Ag region distributed in an island shape on the oxide dielectric layer;

[0035] Step A3, annealing the Ag film or the oxide dielectric layer in the island-shaped Ag region, so that the metal distribution state changes from film state or island state to nanoparticles with different particle sizes.

[0036] Step A4, repeating step A1, preparing another layer of oxide medium layer of the same material as in step A1 on the oxide medium layer with Ag nanoparticles, and completing the complete coverage of Ag nanoparticles, thereby completing the oxi...

Embodiment

[0041] An oxide electronic synapse device modified by silver nanoparticles, which consists of heavily doped silicon substrate as the bottom electrode 01, film-like tantalum oxide with a thickness of 30 nm as the film-like oxide dielectric layer 02, and Ti with a thickness of 100 nm as the top electrode. Electrode 03 constitutes.

[0042] Embedding metal Ag nanoparticles 04 in the film-like oxide dielectric layer, the specific implementation steps are as follows:

[0043] B1) A 13 nm tantalum oxide film-like dielectric layer was prepared on the P-type heavily doped silicon bottom electrode by magnetron sputtering.

[0044] B2) An Ag metal layer with a thickness of 1 nm is prepared on the tantalum oxide dielectric layer by evaporation.

[0045] B3) Anneal the oxide dielectric layer with the Ag metal layer at 300°C for 10 minutes, so that the metal distribution state changes from a film state to a nanoparticle, the particle height does not exceed 5 nm, and the average particle s...

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Abstract

The invention provides an electronic synaptic device modified by silver nanoparticles. The electronic synaptic device comprises a bottom electrode; the bottom electrode comprises a substrate; the bottom electrode is covered with a film-shaped oxide dielectric layer embedded with Ag nanoparticles; a top electrode is arranged on the film-shaped oxide dielectric layer; the bottom electrode and the top electrode are both in electric contact connection with the film-shaped oxide dielectric layer; and the Ag nanoparticles are embedded into the oxide medium, so that the linearity of synapse weight adjustment is enhanced, the weight loss in the conversion process is reduced, and the synapse performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices, in particular to an electronic synapse device modified by silver nanoparticles. Background technique [0002] Synapse is one of the most basic learning and memory units in the biological brain, and the simulation of synaptic behavior is the hardware basis for building a brain-like computing system. Conventional electronic synapses are designed based on complementary metal-oxide-semiconductor (CMOS) circuits, consisting of dozens of transistors and capacitors, which are difficult to integrate on a large scale. In order to break through the limitations of traditional electronic synapses, people have begun to work on the simulation of synaptic behavior on a single electronic device in order to obtain brain-like computing chips with high-density integration and low power consumption. The use of oxides to make sandwich-structure electronic synaptic devices has the advantages of simple...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/20H10N70/881H10N70/883H10N70/011
Inventor 赖云锋万建栋林培杰程树英郑巧俞金玲
Owner FUZHOU UNIV
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