Method for preparing component-adjustable two-dimensional h-BNC hybrid thin film

A hybrid and thin-film technology, applied in the field of material science, can solve problems such as expensive, unstable precursors, and difficult to control growth parameters, and achieve the effects of avoiding instability, good film uniformity, and good controllability

Inactive Publication Date: 2020-09-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

At present, two-dimensional h-BNC hybrid films have been prepared based on chemical vapor deposition (CVD) and in-situ electron beam irradiation, but there are still problems such as unstable precursors, high prices, and interrelated growth parameters that are difficult to control. On the other hand, the quality and uniformity of the hybrid film still needs to be improved

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  • Method for preparing component-adjustable two-dimensional h-BNC hybrid thin film
  • Method for preparing component-adjustable two-dimensional h-BNC hybrid thin film
  • Method for preparing component-adjustable two-dimensional h-BNC hybrid thin film

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] The present invention is based on the ion beam assisted deposition method, adopts argon ion beam sputtering and sintering, the boron nitride target produces B and N sources, and a certain amount of methane is passed through during the growth process to provide a carbon source to grow two-dimensional h-BNC heterogeneous At the same time, the composition of the h-BNC thin film can be adjusted by adjusting the flow rate of methane and the ion beam current density, so as to prepare a high-quality two-dimensional h-BNC hybrid thin film.

[0032] figure 1 A flow chart of a method for preparing a composition-tunable two-dimensional h-BNC hybrid film provided by the present invention is shown. Such as figure 1 As shown, ...

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Abstract

The invention provides a method for preparing a component-adjustable two-dimensional h-BNC hybrid thin film. The method comprises the steps that a substrate is prepared, and the substrate is placed inan ion beam sputtering deposition system; back bottom vacuum is pre-extracted, and the substrate is warmed and annealed in the hydrogen atmosphere; after annealing is finished, hydrogen is shut off,so that a chamber restores to the vacuum environment, and then methane and argon are input into the chamber; an argon ion beam is generated through an ion source, a sintered boron nitride target material is subjected to bombardment, meanwhile, methane is decomposed, boron, nitrogen and carbon atoms are deposited on the surface of the substrate, and a two-dimensional h-BNC hybrid thin film is formed; and after growing is finished, methane gas and a heating source are shut off so that a sample can be cooled along with a furnace, and the two-dimensional h-BNC hybrid thin film is finally obtained.According to the method for preparing the two-dimensional h-BNC hybrid thin film, the problems that precursors are instable, and many by-products are generated can be effectively avoided, controllability is good, and the uniformity of the prepared thin film is good.

Description

technical field [0001] The invention relates to the technical field of material science, in particular to a method for preparing a two-dimensional h-BNC hybrid thin film with adjustable components. Background technique [0002] In recent years, due to its atomic thickness, unique low-dimensional structure, and many excellent physical, chemical and electronic properties, two-dimensional layered materials have aroused people's research upsurge. Graphene is a typical representative of two-dimensional layered materials, with ultra-high carrier mobility, high thermal conductivity, high chemical stability and good mechanical properties, etc., showing potential application prospects in the field of electronic devices and circuits. However, due to the lack of bandgap, graphene-based field-effect transistors usually cannot be turned off, seriously affecting their practical electronic applications. [0003] With the rise of graphene research, other two-dimensional layered materials h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/46C23C14/06C23C14/02
CPCC23C14/02C23C14/0664C23C14/46
Inventor 孟军华张兴旺程立昆尹志岗吴金良
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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