Polystyrene-porphyrin derivative nano vertical array thin film as well as preparation method and application thereof

A polystyrene, derivative technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as limited charge trapping sites, and is conducive to large-scale commercialization. , improve storage performance, and facilitate the effect of effective transmission

Active Publication Date: 2020-08-18
NANJING UNIV OF POSTS & TELECOMM
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, mixed evaporation of polystyrene (PS) and organic small molecules often forms a uniform and smooth film, resulting in limited charge trapping sites.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polystyrene-porphyrin derivative nano vertical array thin film as well as preparation method and application thereof
  • Polystyrene-porphyrin derivative nano vertical array thin film as well as preparation method and application thereof
  • Polystyrene-porphyrin derivative nano vertical array thin film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] (1) The present invention uses following medicine:

[0046] ①DAH 2 P is a small molecular material of porphyrin derivatives, purchased from Aldrich Chemical Reagent Company;

[0047] The molecular formula structure is as follows:

[0048]

[0049] ②PS (polystyrene) was purchased from Aldrich Chemical Reagent Company; the molecular formula structure is as follows:

[0050]

[0051] ③PENTACENE (pentacene) was purchased from Aldrich Chemical Reagent Company; the molecular formula structure is as follows:

[0052]

[0053] (2) The preparation process of polystyrene and porphyrin derivative composite nano vertical array film among the present invention is as follows:

[0054] ①At room temperature, weigh a certain amount of DAH 2 Drug P was dissolved in chlorobenzene solution and prepared to 1mg·mL -1 DAH 2 P solution;

[0055] ②Weigh a certain amount of PS and dissolve it in chlorobenzene to make 3mg·mL -1 PS solution;

[0056] ③Measure an appropriate amoun...

Embodiment 2

[0081] The preparation method is the same as in Example 1, except that the solution volume ratio of the two substances is changed to DAH 2 P solution:PS solution=1:0.2. Its storage window as Figure 10 As shown, under the same gate voltage of -140V as in Example 1, the total window is 80V, the positive window almost disappears, and the electron capture ability is poor, mainly the negative storage window for trapping holes. It can be seen that the DAH at low PS ratio 2 P-functional films also have considerable storage window properties.

Embodiment 3

[0083] The preparation method is the same as in Example 1, except that the solution volume ratio of the two substances is changed to DAH 2 P solution: PS solution = 1:2; storage window such as Figure 11 As shown, under the same gate voltage of -140V as in Example 1, the total window is 100V, the negative window is about 90V, and the positive window is about 10V. The hole trapping ability is still excellent, but the electron trapping ability is reduced. But there is still a considerable positive window, which shows that DAH as a whole 2 The recombination of P and PS has good charge storage properties to a certain extent and in an appropriate ratio.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a polystyrene-porphyrin derivative nano vertical array thin film as well as a preparation method and application thereof. The nano vertical array thin film functional thin filmis formed by mixing polystyrene and porphyrin derivatives in a proper proportion, is uniform in morphology, low in roughness and simple in process, and can be used for preparing a nonvolatile floating gate type transistor memory with a high switching ratio, high stability and high tolerance.

Description

technical field [0001] The invention belongs to the technical field of functional thin film devices, and is applied to the field of memory in the electronic industry, in particular to a polystyrene-porphyrin derivative nano vertical array film, which is used as an organic field effect transistor memory charge storage layer, and realizes high Fabrication of Performance Organic Field-Effect Transistor Memory. Background technique [0002] With the rapid development of science and technology in today's world and the improvement of people's living standards, smart electronic products are ubiquitous in our lives, including computers, chips, communications, storage, etc. As a representative of new materials, organic small molecules have the following advantages: ① Special electrical properties can be realized through molecular structure design and regulation; ② Manufacturing electronic devices based on organic materials can effectively reduce production costs; ③ It has the charact...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09D125/06C09D7/63H01L51/05B82Y40/00B82Y30/00B05D7/26B05D3/02B05D1/00
CPCC09D125/06C09D7/63B82Y40/00B82Y30/00B05D7/26B05D1/005B05D3/0254H10K10/474H10K10/476H10K10/466C08K5/3467
Inventor 石乃恩顾大庆仪明东丁震黄维余洋
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap