A method for preparing a high-reliability and high-density integrated structure of a power device

Abstract

The invention discloses a method for preparing a highly reliable and high-density integrated structure of a power device, comprising the following steps: S1, drawing a three-dimensional model of the integrated structure of a power device; S2, using a gradient material to make a prototype of a heat dissipation matrix according to the three-dimensional model; S3, using Precisely process the prototype of the heat dissipation substrate into shape; S4, clean the formed heat dissipation substrate; S5, generate a layer of aluminum oxide film on the required position on the surface of the heat dissipation substrate; S6, deposit metal circuits on the surface of the aluminum oxide film; S7 , connect the bare chip, micro-module and packaging unit to the designated area on the surface of the heat dissipation substrate; S8, weld and seal the outer cover of the power device and the heat dissipation substrate. The preparation method of the invention can ensure the three-dimensional high-density integration of power devices, and efficiently dissipate heat, so as to realize the integration of circuits and heat dissipation.

Description

technical field [0001] The invention relates to the technical field of integration of power electronic components, in particular to a method for preparing a highly reliable and high-density integrated structure of power devices, which is used for highly reliable three-dimensional assembly of power devices. Background technique [0002] The demand for miniaturization of electronic equipment has led to an overall increase in the integration density of electronic components in terms of components, substrates, and packaging structures. New technologies such as various miniaturized devices, multi-functional substrates, and three-dimensional stacked interconnections have been continuously developed. For power devices, there are various heat dissipation structures and heat dissipation materials emerging in endlessly. [0003] Existing heat dissipation technologies for power devices mainly include microchannel liquid cooling, high thermal conductivity substrate heat dissipation, an...

AI Technical Summary

Problems solved by technology

[0005] 1) As the miniaturization of current circuits is becoming more and more prominent, the size of the micro-channel integrated in the circuit board is required to be very small (on the order of 50 microns), which is difficult to achieve by conventional means such as machining. Etching and other processing methods are technically difficult and costly;

[0006] 2) This type of microfluidic channel can usually only use a silicon substrate as a carrier, requiring that the surface circuit must be integrated on the surface of the silicon chip. Since silicon is a semiconductor, it is difficult to integrate broadband high-frequency circuits on the silicon chip under the current technology, so use limited range

Therefore, pure metals with high thermal conductivity cannot form the structural form of three-dimensional high-density assembly of power devices

[0010] The applied for invention patent "a heat dissipation conformal circuit and its manufacturing method" (application publication number CN109378302A) describes a three-dimensional efficient heat dissipation method, but the heat dissipation metal core is made of high thermal conductivity metal, and the dielectric layer is made of organic insulating material , the thermal expansion coefficients of these two series of materials are too different from those of the chip. If the low thermal resistance interconnection (such as brazing) is directly performed, the interconnection interface will have a great reliability risk

[0011] There is no patent for any preparation method for high reliability and high density integrated structure of power devices

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