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A kind of polarization-doped SBD diode and its preparation method

A polarized doping and diode technology, applied in the direction of diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as increasing breakdown voltage, reducing forward conduction current, increasing forward conduction voltage, etc., to achieve increased Effects of reverse breakdown voltage, reduction of forward conduction current, and increase of forward conduction voltage

Active Publication Date: 2022-04-19
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Application Information

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Problems solved by technology

The traditional SBD structure, while increasing the height of the Schottky barrier to increase the breakdown voltage, has the disadvantages of increasing the forward conduction voltage and reducing the forward conduction current

Method used

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  • A kind of polarization-doped SBD diode and its preparation method
  • A kind of polarization-doped SBD diode and its preparation method
  • A kind of polarization-doped SBD diode and its preparation method

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] Example This example provides a method for preparing a novel SBD diode with a terminal structure using polarized doping

[0029] The SBD diode structure of this example is GaN substrate, n-type GaN layer, n - type GaN layer, graded doped n-type AlGaN structure, embedding the n - The high-resistance region of the GaN layer, the cathode at the bottom of the GaN substrate and the anode at the top of the GaN layer, wherein the graded doped Al x Ga 1-x The bottom layer of the N structure is an n-AlGaN layer, the top layer is an n-GaN layer, and the Al composition gradually decreases from bottom to top, where 0≤x≤1; the upper surface of the high resistance region is in common with the n-GaN layer on the top noodle.

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Abstract

The present invention proposes a polarized SBD diode and its preparation method. ‑ Type GAN layer, gradient -doped Algan structure, embedded N ‑ The high -resistance area of the type GAN layer, the cathode at the bottom of the GAN substrate, and the anode on the top of the GAN layer at the top, among which the gradient is mixed x GA 1‑x The bottom layer of the N structure is the Ngalgan layer, and the top layer is the n‑gan layer. The AL component gradually decreases from the bottom to the top, of which 0 ≤ x ≤ 1;noodle.Use gradient doping methods to perform polar doping on the N -type area, and use the oxidation layer terminal structure to improve the SBD breakdown voltage while solving the problem of low positive direction voltage and small direction current.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a polarized doped SBD diode and a preparation method thereof. Background technique [0002] Schottky diode Schottky (Schottky) diode is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes. It is also useful as rectifier diodes and small-signal detector diodes in microwave communication circuits. It is more common in communication power supplies, frequency converters, etc. In the traditional SBD structure, while increasing the height of the Schottky barrier to increase the breakdown voltage, it also has the disadvantages of increasing the forward conduction voltage and reducing the forward...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/872H01L29/66212H01L29/0684H01L29/0611
Inventor 高博刘新科
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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