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A kind of preparation method of tungsten disulfide single crystal with controllable number of layers

A tungsten disulfide single crystal and single crystal technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of unsteady control, poor experimental repeatability, and inaccurate control, etc., and achieve the preparation repetition rate High effect of high utilization rate of raw materials

Active Publication Date: 2021-06-04
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

Among them, CVD synthesis of two-dimensional WS 2 Sulfur powder and tungsten trioxide powder are usually used as precursors, and the amount of reaction precursors cannot be precisely controlled, resulting in poor repeatability of experiments and inability to stably control WS. 2 The preparation of the number of layers limits the large-scale industrialization of the chemical vapor deposition method to control the synthesis of different layers of WS 2 development of

Method used

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  • A kind of preparation method of tungsten disulfide single crystal with controllable number of layers
  • A kind of preparation method of tungsten disulfide single crystal with controllable number of layers
  • A kind of preparation method of tungsten disulfide single crystal with controllable number of layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Example 1 WS 2 Preparation of sample α

[0056] (1) Micropatterned WO 3 Precursor preparation:

[0057] Place the hollow plate (the hollow pattern on the plate is a circular array) on 285nm SiO 2 / Si substrate (that is, the surface layer is 285nmSiO 2 silicon wafer), placed together in the coating machine, by thermal evaporation on 285nm SiO 2 Micropatterned WO with a thickness of 3 nm evaporated on Si substrate 3 source (or WO 3 precursor): at 285nm SiO 2 / Si substrate, WO 3 The diameter of the circular array is 150 μm, and the distance between the center of the circle is 450 μm, such as figure 1 shown.

[0058] (2) Preparation of WS by chemical vapor deposition (CVD) 2 :

[0059] (2.1) Micropatterned WO plated with a thickness of 3nm 3 source of SiO 2 / Si substrate is placed in the center of the heating zone of the tube furnace, and 300 sccm argon gas is introduced into the tube furnace for 30 minutes to exhaust the air in the tube furnace;

[0060] (2.2...

Embodiment 2

[0061] Example 2 WS 2 Preparation of sample β

[0062] (1) Micropatterned WO 3 Precursor preparation:

[0063] Place the hollow plate (the hollow pattern on the plate is a circular array) on 285nm SiO 2 / Si substrate (that is, the surface layer is 285nmSiO 2 silicon wafer), placed together in the coating machine, by thermal evaporation on 285nm SiO 2 Micropatterned WO with a thickness of 3 nm evaporated on Si substrate 3 source (or WO 3 precursor): at 285nm SiO 2 / Si substrate, WO 3 The diameter of the circular array is 150 μm, and the distance between the centers of the circles is 450 μm.

[0064] (2) Preparation of WS by chemical vapor deposition (CVD) 2 :

[0065] (2.1) Micropatterned WO plated with a thickness of 3nm 3 source of SiO 2 / Si substrate is placed in the center of the heating zone of the tube furnace, and 300 sccm argon gas is introduced into the tube furnace for 30 minutes to exhaust the air in the tube furnace;

[0066] (2.2) Adjust the argon flow...

Embodiment 3

[0067] Example 3 WS 2 Preparation of sample γ

[0068] (1) Micropatterned WO 3 Precursor preparation:

[0069] Place the hollow plate (the hollow pattern on the plate is a circular array) on 285nm SiO 2 / Si substrate (that is, the surface layer is 285nmSiO 2 silicon wafer), placed together in the coating machine, by thermal evaporation on 285nm SiO 2 Micropatterned WO with a thickness of 3 nm evaporated on Si substrate 3 source (or WO 3 precursor): at 285nm SiO 2 / Si substrate, WO 3 The diameter of the circular array is 150 μm, and the distance between the centers of the circles is 450 μm.

[0070] (2) Preparation of WS by chemical vapor deposition (CVD) 2 :

[0071] (2.1) Micropatterned WO plated with a thickness of 3nm 3 source of SiO 2 / Si substrate is placed in the center of the heating zone of the tube furnace, and 300 sccm argon gas is introduced into the tube furnace for 30 minutes to exhaust the air in the tube furnace;

[0072] (2.2) Adjust the argon gas ...

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Abstract

The invention discloses a method for preparing a tungsten disulfide single crystal with a controllable layer number, using hydrogen sulfide as a sulfur source, and pre-preparing the precursor WO 3 Micro-patterning to achieve precise control of the amount of precursors, to achieve single-layer, double-layer, three-layer and multi-layer WS 2 Controlled preparation of single crystals. The method of the invention requires less raw materials, high yield, good repeatability, high crystal quality and high electron mobility, and is especially suitable for large-area uniformly distributed WS with a controllable number of layers. 2 Preparation of single crystals.

Description

technical field [0001] The invention belongs to the field of preparation of materials by chemical vapor deposition, and in particular relates to the preparation of two-dimensional transition metal chalcogenides by chemical vapor deposition. Background technique [0002] Since the mechanical exfoliation of graphene by Andre Geim at the University of Manchester, UK, boron nitride (BN), black scale (BP), transition metal dichalcogenides (TMDs), transition metal carbon / nitrogen compounds ( MXenes) and other two-dimensional materials, in which the chemical formula of transition metal dichalcogenides (TMDs) is MX 2 , M refers to transition metal elements (transitionmetal element), X refers to chalcogens (chalcogens). Monolayer TMDs are a "sandwich" structure consisting of two layers of chalcogen atoms sandwiching a layer of transition metal atoms. The TMDs layer is bonded by chemical covalent bonds, and the interlayer is acted by weak van der Waals force, so a single layer of TM...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B25/00H01L29/24
CPCC30B25/00C30B29/46H01L29/24
Inventor 张礼杰潘宝俊罗婷燕邹超
Owner WENZHOU UNIVERSITY
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