Ultra-smooth tungsten disulfide/hydrogen-containing carbon film and preparation method thereof
A technology of tungsten disulfide and carbon film, which is applied in the field of solid superlubricity and tribology, can solve difficult engineering applications and other problems, and achieve high order, reliable selection, and good wear resistance
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Embodiment 1
[0035] (1) Ultrasonic cleaning the base material (which can be bearing steel, gear steel, etc.) to remove rust spots and dirt, check the surface of the plated parts after cleaning to ensure that there are no rust spots and defects; put it into the vacuum coating chamber, and evacuate to Below 0.001 Pa, start coating;
[0036] (2) Using hollow cathode plasma to prepare hydrogen-containing carbon film, the specific steps are:
[0037] a. Inject argon gas at 2Pa, hollow cathode current 300-400A, bias voltage 800V, duty cycle 80%, and clean for 30 minutes to further remove pollutants on the surface of the workpiece;
[0038] b. Replace argon with 2Pa 5% silane gas mixture, hollow cathode current 300A, bias voltage 200-400V, duty cycle 80%, deposit silicon bonding layer for 30 minutes;
[0039] c. Gradually feed methane within 30 minutes until the gas mixture ratio of methane and 5% silane is listed as 1:1 and keep for 20 minutes;
Embodiment 2
[0044] (1) Ultrasonic cleaning the base material (which can be bearing steel, gear steel, etc.) to remove rust spots and dirt, check the surface of the plated parts after cleaning to ensure that there are no rust spots and defects; put it into the vacuum coating chamber, and evacuate to Below 0.001 Pa, start coating;
[0045] (2) The anode layer ion source is used to assist in the preparation of hydrogen-containing carbon films, and the specific steps are:
[0046] a. Introduce 3Pa argon gas, anode layer ion source voltage 1500-2000V, bias voltage 800V, duty cycle 60%, and clean for 30 minutes to further remove pollutants on the surface of the workpiece;
[0047] b. Replace the argon gas with 2Pa 5% silane gas mixture, the anode layer ion source voltage is 1000-1200V, the bias voltage is 200-400V, the duty cycle is 60%, and the silicon bonding layer is deposited for 40 minutes;
[0048] c. Gradually introduce methane within 30 minutes, until the ratio of methane and 5% silane g...
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